Presentation | 2008-11-27 Improvement of AlN-template quality for deep-UV and UV light emitters Tomohito TAKEDA, Hideaki ANZAI, Hideo KAWANISHI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Misfit-dislocation and related defects were grown on hetero-interface between substrate and epitaxial layer, and influence to light emitter's efficiency, in ordinarily speaking. Up to this time, we have reported on (AlN/GaN) Multi-Buffer Layer structure and Alternate Source-Feeding MO-VPE technique for improving crystalline quality, because its affect to emission efficiency of optical devices. In this report, we are discussing on old and new improving technique of the crystalline quality of AlN template, especially edge-type dislocation, for UV and deep-UV light emitter applications. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Deep-UV semiconductor laser / AlN-Template |
Paper # | ED2008-156,CPM2008-105,LQE2008-100 |
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Conference Information | |
Committee | LQE |
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Conference Date | 2008/11/20(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Improvement of AlN-template quality for deep-UV and UV light emitters |
Sub Title (in English) | |
Keyword(1) | Deep-UV semiconductor laser |
Keyword(2) | AlN-Template |
1st Author's Name | Tomohito TAKEDA |
1st Author's Affiliation | Kogakuin University() |
2nd Author's Name | Hideaki ANZAI |
2nd Author's Affiliation | Kogakuin University |
3rd Author's Name | Hideo KAWANISHI |
3rd Author's Affiliation | Kogakuin University |
Date | 2008-11-27 |
Paper # | ED2008-156,CPM2008-105,LQE2008-100 |
Volume (vol) | vol.108 |
Number (no) | 323 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |