Presentation 2008-11-27
Improvement of AlN-template quality for deep-UV and UV light emitters
Tomohito TAKEDA, Hideaki ANZAI, Hideo KAWANISHI,
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Abstract(in English) Misfit-dislocation and related defects were grown on hetero-interface between substrate and epitaxial layer, and influence to light emitter's efficiency, in ordinarily speaking. Up to this time, we have reported on (AlN/GaN) Multi-Buffer Layer structure and Alternate Source-Feeding MO-VPE technique for improving crystalline quality, because its affect to emission efficiency of optical devices. In this report, we are discussing on old and new improving technique of the crystalline quality of AlN template, especially edge-type dislocation, for UV and deep-UV light emitter applications.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Deep-UV semiconductor laser / AlN-Template
Paper # ED2008-156,CPM2008-105,LQE2008-100
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Conference Information
Committee LQE
Conference Date 2008/11/20(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Improvement of AlN-template quality for deep-UV and UV light emitters
Sub Title (in English)
Keyword(1) Deep-UV semiconductor laser
Keyword(2) AlN-Template
1st Author's Name Tomohito TAKEDA
1st Author's Affiliation Kogakuin University()
2nd Author's Name Hideaki ANZAI
2nd Author's Affiliation Kogakuin University
3rd Author's Name Hideo KAWANISHI
3rd Author's Affiliation Kogakuin University
Date 2008-11-27
Paper # ED2008-156,CPM2008-105,LQE2008-100
Volume (vol) vol.108
Number (no) 323
Page pp.pp.-
#Pages 4
Date of Issue