| Presentation | 2008-11-27 Growth and characterization of nonpolar and semipolar (Al, In, Ga) N films on ZnO substrates Atsushi KOBAYASHI, Kohei UENO, Kazuma SHIMOMOTO, Jitsuo OHTA, Hiroshi FUJIOKA, Masaharu OSHIMA, Hidetaka AMANAI, Satoru NAGAO, Hideyoshi HORIE, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have succeeded in epitaxial growth of high-quality nonpolar and semipolar (Al, In, Ga) N films on ZnO substrates using room temperature growth technique by pulsed excitation deposition (PXD). ZnO is a chemically vulnerable material at elevated temperatures although it gives small lattice mismatches to III-nitrides and shares the same crystal symmetry. Therefore, it is difficult to grow high-quality films on ZnO substrates by conventional MOCVD or MBE techniques. On the other hand, the use of PXD allows us to grow nitrides at low temperatures thanks to high kinetic energy of film precursors. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Group-III nitrides / nonpolar / semipolar / ZnO pulsed excitation deposition / low-temperature growth |
| Paper # | ED2008-155,CPM2008-104,LQE2008-99 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2008/11/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth and characterization of nonpolar and semipolar (Al, In, Ga) N films on ZnO substrates |
| Sub Title (in English) | |
| Keyword(1) | Group-III nitrides |
| Keyword(2) | nonpolar |
| Keyword(3) | semipolar |
| Keyword(4) | ZnO pulsed excitation deposition |
| Keyword(5) | low-temperature growth |
| 1st Author's Name | Atsushi KOBAYASHI |
| 1st Author's Affiliation | Department of Applied Chemistry, The University of Tokyo() |
| 2nd Author's Name | Kohei UENO |
| 2nd Author's Affiliation | Institute of Industrial Science, The University of Tokyo |
| 3rd Author's Name | Kazuma SHIMOMOTO |
| 3rd Author's Affiliation | Institute of Industrial Science, The University of Tokyo |
| 4th Author's Name | Jitsuo OHTA |
| 4th Author's Affiliation | Institute of Industrial Science, The University of Tokyo |
| 5th Author's Name | Hiroshi FUJIOKA |
| 5th Author's Affiliation | Institute of Industrial Science, The University of Tokyo:CREST, Japan Science and Technology Agency |
| 6th Author's Name | Masaharu OSHIMA |
| 6th Author's Affiliation | Department of Applied Chemistry, The University of Tokyo:CREST, Japan Science and Technology Agency |
| 7th Author's Name | Hidetaka AMANAI |
| 7th Author's Affiliation | Mitsubishi Chemical Group Science and Technology Research Center |
| 8th Author's Name | Satoru NAGAO |
| 8th Author's Affiliation | Mitsubishi Chemical Group Science and Technology Research Center |
| 9th Author's Name | Hideyoshi HORIE |
| 9th Author's Affiliation | Mitsubishi Chemical Group Science and Technology Research Center |
| Date | 2008-11-27 |
| Paper # | ED2008-155,CPM2008-104,LQE2008-99 |
| Volume (vol) | vol.108 |
| Number (no) | 323 |
| Page | pp.pp.- |
| #Pages | 4 |
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