| Presentation | 2008-11-27 A Proposal of InGaN-Based Multiple-Colored Light Emitting Devices Using Selective Area Metal-Organic Vapor Phase Epitaxy Tomonari SHIODA, Yuki TOMITA, Masakazu SUGIYAMA, Yukihiro SHIMOGAKI, Yoshiaki NAKANO, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Selective area metal-organic vapor phase epitaxy (SA-MOVPE) allows in-plane control of layer composition and thickness. We have analyzed thickness and photoluminescence (PL) profiles of InGaN layers around the relatively wide (>10μm) selective masks. Numerical simulation using vapor phase diffusion model was also carried out. To obtain deposition selectivity between masks and crystal surface, in-situ etching using hydrogen is effective because it prevents GaN nucleation on mask. Consequently, the maximum growth rate enhancement of 4.8 and photoluminescence peak shift of 54nm (nominal 11% indium composition shift) were achieved for InGaN bulk layer. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Metal-organic vapor phase epitaxy / selective area growth / InGaN / kinetic model / monolithic integration |
| Paper # | ED2008-154,CPM2008-103,LQE2008-98 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2008/11/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A Proposal of InGaN-Based Multiple-Colored Light Emitting Devices Using Selective Area Metal-Organic Vapor Phase Epitaxy |
| Sub Title (in English) | |
| Keyword(1) | Metal-organic vapor phase epitaxy |
| Keyword(2) | selective area growth |
| Keyword(3) | InGaN |
| Keyword(4) | kinetic model |
| Keyword(5) | monolithic integration |
| 1st Author's Name | Tomonari SHIODA |
| 1st Author's Affiliation | Research Center for Advanced Science and Technology, The University of Tokyo:School of Engineering, The University of Tokyo() |
| 2nd Author's Name | Yuki TOMITA |
| 2nd Author's Affiliation | School of Engineering, The University of Tokyo |
| 3rd Author's Name | Masakazu SUGIYAMA |
| 3rd Author's Affiliation | School of Engineering, The University of Tokyo |
| 4th Author's Name | Yukihiro SHIMOGAKI |
| 4th Author's Affiliation | School of Engineering, The University of Tokyo |
| 5th Author's Name | Yoshiaki NAKANO |
| 5th Author's Affiliation | Research Center for Advanced Science and Technology, The University of Tokyo:School of Engineering, The University of Tokyo |
| Date | 2008-11-27 |
| Paper # | ED2008-154,CPM2008-103,LQE2008-98 |
| Volume (vol) | vol.108 |
| Number (no) | 323 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |