| Presentation | 2008-11-27 Fabrication of regularly arranged InGaN/GaN nanocolumns by Ti mask selective area growth throughout rf-plasma-assisted molecular-beam epitaxy Hiroto Sekiguchi, Akihiko Kikuchi, Katsumi Kishino, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | GaN nanocolumns have high optical properties due to dislocation-free nature. We report the fabrication of regularly arranged InGaN/GaN nanocolumns using Ti mask selective area growth technology by rf-plasma-assisted molecular-beam epitaxy (rf-MBE). The SAG of GaN nanocolumns strongly depended on the growth temperature (T_g), i.e.; at the T_g below 900℃, no SAG occurred, but above 900℃, SAG occurred. An excess value of T_g above 900℃ brought about an increased inhomogeneity in the nanocolumn shape. Uniform nanocolumn arrays were grown around the critical temperature of 900℃. A low supplied nitrogen suppressed the lateral growth of nanocolumn and the nucleation of GaN nanocrystals on the nitrided Ti thin layer. For regularly arranged InGaN/GaN nanocolumn arrays with different In composition, blue to red emissions were observed at room temperature and the PL-FWHM of those was narrower than those of self-organized nanocolumns. The ratio of PL integrated intensity at 300K to that at 4K was obtained to be 77% for a sample with 112nm diameter and 200nm period. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Nanocolumn / Nanorod / Nanowire / Nitride Semiconductor / Selective-Area Growth / Molecular Beam Epitaxy |
| Paper # | ED2008-152,CPM2008-101,LQE2008-96 |
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| Committee | LQE |
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| Conference Date | 2008/11/20(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of regularly arranged InGaN/GaN nanocolumns by Ti mask selective area growth throughout rf-plasma-assisted molecular-beam epitaxy |
| Sub Title (in English) | |
| Keyword(1) | Nanocolumn |
| Keyword(2) | Nanorod |
| Keyword(3) | Nanowire |
| Keyword(4) | Nitride Semiconductor |
| Keyword(5) | Selective-Area Growth |
| Keyword(6) | Molecular Beam Epitaxy |
| 1st Author's Name | Hiroto Sekiguchi |
| 1st Author's Affiliation | Department of Electrical and Electronics Engineering, Sophia University:CREST, Japan Science and Technology Agency() |
| 2nd Author's Name | Akihiko Kikuchi |
| 2nd Author's Affiliation | Department of Electrical and Electronics Engineering, Sophia University:Sophia Nanotechnology research center:CREST, Japan Science and Technology Agency |
| 3rd Author's Name | Katsumi Kishino |
| 3rd Author's Affiliation | Department of Electrical and Electronics Engineering, Sophia University:Sophia Nanotechnology research center:CREST, Japan Science and Technology Agency |
| Date | 2008-11-27 |
| Paper # | ED2008-152,CPM2008-101,LQE2008-96 |
| Volume (vol) | vol.108 |
| Number (no) | 323 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |