| Presentation | 2009-01-29 GaInAsP/InP single-trench type TE-TM mode converter Sang-Hun KIM, Ryohei TAKEI, Tetsuya MIZUMOTO, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A TE-TM mode converter is proposed in a single trench GaInAsP/InP waveguide configuration fabricated by a single masking and etching process. Use of single-trench structure makes the design and the fabrication much simpler. The design of single-trench mode converter is described together with its fabrication in this article. 50% TE-TM mode conversion was obtained at a wavelength of 1.55μm in a fabricated device. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Optical Mode Converter / Reactive Ion Etching Lag / Optical Isolator |
| Paper # | PN2008-54,OPE2008-157,LQE2008-154 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2009/1/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | GaInAsP/InP single-trench type TE-TM mode converter |
| Sub Title (in English) | |
| Keyword(1) | Optical Mode Converter |
| Keyword(2) | Reactive Ion Etching Lag |
| Keyword(3) | Optical Isolator |
| 1st Author's Name | Sang-Hun KIM |
| 1st Author's Affiliation | Department of EEE, Tokyo Institute of Technology() |
| 2nd Author's Name | Ryohei TAKEI |
| 2nd Author's Affiliation | Department of EEE, Tokyo Institute of Technology |
| 3rd Author's Name | Tetsuya MIZUMOTO |
| 3rd Author's Affiliation | Department of EEE, Tokyo Institute of Technology |
| Date | 2009-01-29 |
| Paper # | PN2008-54,OPE2008-157,LQE2008-154 |
| Volume (vol) | vol.108 |
| Number (no) | 419 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |