| Presentation | 2009-01-29 Reverse current reduction of Ge pin photodiodes on Si without post-growth annealing Sungbong Park, Shinya Takita, Yasuhiko Ishikawa, Jiro Osaka, Kazumi Wada, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A new approach to reduce the reverse current of Ge pin photodiodes on Si is presented, in which an i-Si layer is inserted between Ge and top Si layers to reduce the electric field in the Ge layer. Without post-growth annealing, the reverse current density is reduced to ～10mA/cm^2 at -1V, i.e. one order of magnitude lower than that of the reference photodiode without i-Si layer. The responsivity of the Ge photodiode reaches the nearly theoretical maximum. This "non-thermal" approach to reduce reverse current should accelerate electronics-photonics convergence using Ge on the Si CMOS platform. |
| Keyword(in Japanese) | (See Japanese page) |
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| Paper # | PN2008-44,OPE2008-147,LQE2008-144 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2009/1/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Reverse current reduction of Ge pin photodiodes on Si without post-growth annealing |
| Sub Title (in English) | |
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| 1st Author's Name | Sungbong Park |
| 1st Author's Affiliation | Department of Materials Engineering, Graduate School of Engineering The University of Tokyo() |
| 2nd Author's Name | Shinya Takita |
| 2nd Author's Affiliation | Department of Materials Engineering, Graduate School of Engineering The University of Tokyo |
| 3rd Author's Name | Yasuhiko Ishikawa |
| 3rd Author's Affiliation | Department of Materials Engineering, Graduate School of Engineering The University of Tokyo |
| 4th Author's Name | Jiro Osaka |
| 4th Author's Affiliation | Department of Materials Engineering, Graduate School of Engineering The University of Tokyo |
| 5th Author's Name | Kazumi Wada |
| 5th Author's Affiliation | Department of Materials Engineering, Graduate School of Engineering The University of Tokyo |
| Date | 2009-01-29 |
| Paper # | PN2008-44,OPE2008-147,LQE2008-144 |
| Volume (vol) | vol.108 |
| Number (no) | 419 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |