Presentation 2009-01-30
Improvement of Filtering Characteristics of Bragg Grating Formed on Silicon Waveguide by Deep-RIE Etching
Junya MATSUI, Hiroki TAKAHASHI, Nan XIE, Katsuyuki UTAKA,
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Abstract(in English) With the increase of communication capacity by WDM, low-cost and high-performance optical devices using Si waveguide on silicon-on-insulator (SOI) substrates attract attention. So far we fabricated the Michelson Interferometer-type filter which works as a WDM interleaver consisting of large coupling-coefficient Si grating made by Deep-RIE. In this paper, we report the improvement of grating characteristics, such as a large transmission contrast of about 25dB and a band width of about 6nm for the grating by deep grating with reduced roughness.
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Keyword(in English) WDM / SOI / Bragg Grating / Filter Device / Deep-RIE
Paper # PN2008-69,OPE2008-172,LQE2008-169
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Committee OPE
Conference Date 2009/1/22(1days)
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Registration To Optoelectronics (OPE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Improvement of Filtering Characteristics of Bragg Grating Formed on Silicon Waveguide by Deep-RIE Etching
Sub Title (in English)
Keyword(1) WDM
Keyword(2) SOI
Keyword(3) Bragg Grating
Keyword(4) Filter Device
Keyword(5) Deep-RIE
1st Author's Name Junya MATSUI
1st Author's Affiliation Faculty of Science and Engineering, Waseda University()
2nd Author's Name Hiroki TAKAHASHI
2nd Author's Affiliation Faculty of Science and Engineering, Waseda University
3rd Author's Name Nan XIE
3rd Author's Affiliation Faculty of Science and Engineering, Waseda University
4th Author's Name Katsuyuki UTAKA
4th Author's Affiliation Faculty of Science and Engineering, Waseda University
Date 2009-01-30
Paper # PN2008-69,OPE2008-172,LQE2008-169
Volume (vol) vol.108
Number (no) 418
Page pp.pp.-
#Pages 4
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