Presentation 2009/1/22
Preparation of Impurity-Doped ZnO Transparent Electrodes Suitable for LCD Applications by Magnetron Sputtering
Junichi NOMOTO, Manabu KONAGAI, Haruki FUKADA, Toshihiro MIYATA, Tadatsugu MINAMI,
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Abstract(in English) Impurity-doped ZnO thin films suitable for transparent electrode applications in LCDs that reduce resistivity and improve the uniformity of resistivity distribution have been prepared by newly developed oxidization-suppressing dc magnetron sputtering deposition methods that superimpose rf power and use more optimized targets. Descriptions are also presented concerning the observed increase in the resistivity of impurity-doped ZnO thin films resulting from exposure to long-term testing in a high humidity environment (air at 90% relative humidity and 60℃) as well as the increase in resistivity associated with a decrease of film thickness. The resistivity stability of impurity-doped ZnO thin films might be considerably improved by co-doping with another impurity.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Zinc oxide / transparent electrode / thin film / AZO / GZO / dc magnetron sputtering / resistivity
Paper # EID2008-66
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Committee EID
Conference Date 2009/1/22(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Preparation of Impurity-Doped ZnO Transparent Electrodes Suitable for LCD Applications by Magnetron Sputtering
Sub Title (in English)
Keyword(1) Zinc oxide
Keyword(2) transparent electrode
Keyword(3) thin film
Keyword(4) AZO
Keyword(5) GZO
Keyword(6) dc magnetron sputtering
Keyword(7) resistivity
1st Author's Name Junichi NOMOTO
1st Author's Affiliation Optoelectronic Device System R&D Center, Kanazawa Institute of Technology()
2nd Author's Name Manabu KONAGAI
2nd Author's Affiliation Optoelectronic Device System R&D Center, Kanazawa Institute of Technology
3rd Author's Name Haruki FUKADA
3rd Author's Affiliation Optoelectronic Device System R&D Center, Kanazawa Institute of Technology
4th Author's Name Toshihiro MIYATA
4th Author's Affiliation Optoelectronic Device System R&D Center, Kanazawa Institute of Technology
5th Author's Name Tadatsugu MINAMI
5th Author's Affiliation Optoelectronic Device System R&D Center, Kanazawa Institute of Technology
Date 2009/1/22
Paper # EID2008-66
Volume (vol) vol.108
Number (no) 421
Page pp.pp.-
#Pages 4
Date of Issue