| Presentation | 2009/1/22 Emission Properties of Nanocrystalline Silicon based Metal-oxide-semiconductor Cathode Arrays Yo KIDA, Hidetaka SHIMAWAKI, Yoichiro NEO, Hidenori MIMURA, Katsuhisa MURAKAMI, Fujio WAKAYA, Mikio TAKAI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Metal-oxide-semiconductor(MOS) cathode arrays based on nanocrystalline silicon covered with a thin oxide film prepared by a pulsed laser ablation technique have been fabricated and their emission properties have been investigated. The electron emission occurred at the gate voltage higher than the work function of the Au gate, and was relatively stable. We observed the emission image on the phosphor screen and the emission divergence was estimated to be less than 3°. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOS / tunneling cathode / electron emission / nanocrystalline silicon |
| Paper # | EID2008-64 |
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| Conference Information | |
| Committee | EID |
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| Conference Date | 2009/1/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electronic Information Displays (EID) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Emission Properties of Nanocrystalline Silicon based Metal-oxide-semiconductor Cathode Arrays |
| Sub Title (in English) | |
| Keyword(1) | MOS |
| Keyword(2) | tunneling cathode |
| Keyword(3) | electron emission |
| Keyword(4) | nanocrystalline silicon |
| 1st Author's Name | Yo KIDA |
| 1st Author's Affiliation | Graduate School of Engineering, Hachinohe Institute of Technology() |
| 2nd Author's Name | Hidetaka SHIMAWAKI |
| 2nd Author's Affiliation | Graduate School of Engineering, Hachinohe Institute of Technology |
| 3rd Author's Name | Yoichiro NEO |
| 3rd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 4th Author's Name | Hidenori MIMURA |
| 4th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 5th Author's Name | Katsuhisa MURAKAMI |
| 5th Author's Affiliation | Center for Quantum Science and Technology under Extreme Conditions, Osaka University |
| 6th Author's Name | Fujio WAKAYA |
| 6th Author's Affiliation | Center for Quantum Science and Technology under Extreme Conditions, Osaka University |
| 7th Author's Name | Mikio TAKAI |
| 7th Author's Affiliation | Center for Quantum Science and Technology under Extreme Conditions, Osaka University |
| Date | 2009/1/22 |
| Paper # | EID2008-64 |
| Volume (vol) | vol.108 |
| Number (no) | 421 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |