| Presentation | 2009/1/22 Fabrication of GaN-based nanostructure-embedded phosphor particles by chemical vapor deposition H. Komoda, H. Kobayashi, Y. Kawanishi, H. Kominami, Y. Nakanishi, K. Hara, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In contrast to the conventional powder phosphors consisting of particles with a uniform material composition, GaN-based nanostructure-embedded particles, which consist of GaN quantum dots or quantum wells in the AlN matrix, has been proposed. We can expect the novel phosphors to have higher luminescence efficiencies owing to the carrier confinement effect. To date, we have focused mainly on the synthesis and characterization of AlN core particles formed by the first process stage. In this study, we studied the conditions systematically, and found that the crystallinity of AlN core particle depends on the reaction temperature and atmosphere. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlN / Chemical Vapor Deposition / X-ray diffraction / Scanning Electron Microscope |
| Paper # | EID2008-53 |
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| Conference Information | |
| Committee | EID |
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| Conference Date | 2009/1/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electronic Information Displays (EID) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of GaN-based nanostructure-embedded phosphor particles by chemical vapor deposition |
| Sub Title (in English) | |
| Keyword(1) | AlN |
| Keyword(2) | Chemical Vapor Deposition |
| Keyword(3) | X-ray diffraction |
| Keyword(4) | Scanning Electron Microscope |
| 1st Author's Name | H. Komoda |
| 1st Author's Affiliation | Research Institute of Electronics, Shizuoka University() |
| 2nd Author's Name | H. Kobayashi |
| 2nd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 3rd Author's Name | Y. Kawanishi |
| 3rd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 4th Author's Name | H. Kominami |
| 4th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 5th Author's Name | Y. Nakanishi |
| 5th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 6th Author's Name | K. Hara |
| 6th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| Date | 2009/1/22 |
| Paper # | EID2008-53 |
| Volume (vol) | vol.108 |
| Number (no) | 421 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |