Presentation 2009/1/22
Effects of annealing on UV luminescence of hexagonal boron nitride powder
Xin LIU, Hiroko KOMINAMI, Yoichiro NAKANISHI, Kazuhiko HARA,
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Abstract(in English) There has been increasing interest in hexagonal boron nitride(h-BN), which shows UV emission at 215nm. Aiming at the application of this material as powder phosphors, we have investigated the effect of the annealing condition at various atmospheres(N_2, H_2, NH_3 and O_2) on its UV emission. The intensity of the 320nm emission band decreased with the annealing at more than 1200℃ in a vacuum. It also decreased in the H_2 and NH_3 atmosphere, while increased by the annealing at 900℃ in the O_2 atmosphere.
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Keyword(in English) hexagonal boron nitride / UV luminescence / cathodoluminescence
Paper # EID2008-51
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Committee EID
Conference Date 2009/1/22(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Effects of annealing on UV luminescence of hexagonal boron nitride powder
Sub Title (in English)
Keyword(1) hexagonal boron nitride
Keyword(2) UV luminescence
Keyword(3) cathodoluminescence
1st Author's Name Xin LIU
1st Author's Affiliation Research Institute of Electronics, Shizuoka University()
2nd Author's Name Hiroko KOMINAMI
2nd Author's Affiliation Research Institute of Electronics, Shizuoka University
3rd Author's Name Yoichiro NAKANISHI
3rd Author's Affiliation Research Institute of Electronics, Shizuoka University
4th Author's Name Kazuhiko HARA
4th Author's Affiliation Research Institute of Electronics, Shizuoka University
Date 2009/1/22
Paper # EID2008-51
Volume (vol) vol.108
Number (no) 421
Page pp.pp.-
#Pages 4
Date of Issue