| Presentation | 2009-01-15 High-frequency and low-noise performances of InP-based HEMTs for millimeter-wave monolithic integrated circuits Issei WATANABE, Akira ENDOH, Takashi MIMURA, Toshiaki MATSUI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | InP-based high electron mobility transistors (HEMTs) are the most promising devices not only for future high-speed and high-frequency wireless communications but also expansion of radio spectrum resources in millimeter-(30-300GHz) and sub-millimeter-wave (300 GHz-3 THz) frequency bands. In this contribution, we measured noise characteristics of 35-nm-gate In_<0.7>Ga_<0.3>As/In_<0.52>Al_<0.48>As HEMTs at a frequency of 90GHz, and achieved a minimum noise figure (NF_ |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InP-based HEMT / InGaAs / InAlAs / minimum noise figure (NF_ |
| Paper # | ED2008-214,MW2008-179 |
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| Conference Information | |
| Committee | MW |
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| Conference Date | 2009/1/7(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Microwaves (MW) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High-frequency and low-noise performances of InP-based HEMTs for millimeter-wave monolithic integrated circuits |
| Sub Title (in English) | |
| Keyword(1) | InP-based HEMT |
| Keyword(2) | InGaAs |
| Keyword(3) | InAlAs |
| Keyword(4) | minimum noise figure (NF_ |
| Keyword(5) | cutoff frequency (f_T) |
| Keyword(6) | maximum oscillation frequency (f_ |
| 1st Author's Name | Issei WATANABE |
| 1st Author's Affiliation | National Institute of Info. & Com. Tech.() |
| 2nd Author's Name | Akira ENDOH |
| 2nd Author's Affiliation | National Institute of Info. & Com. Tech. |
| 3rd Author's Name | Takashi MIMURA |
| 3rd Author's Affiliation | National Institute of Info. & Com. Tech.:Fujitsu Laboratories Limited |
| 4th Author's Name | Toshiaki MATSUI |
| 4th Author's Affiliation | National Institute of Info. & Com. Tech. |
| Date | 2009-01-15 |
| Paper # | ED2008-214,MW2008-179 |
| Volume (vol) | vol.108 |
| Number (no) | 377 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |