| Presentation | 2009-01-15 Reduction of the Base Transit Time in Ultra-thin Graded-Base InP/GaInAs Heterojunction Bipolar Transistor Takafumi UESAWA, Masayuki YAMADA, Yasuyuki MIYAMOTO, Kazuhito FURUYA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We report a Monte Carlo analysis of base transit time in ultra-thin and heavily-doped InP/InGaAs HBT's. In ultra-thin base layer less than 20nm, the influence of the plasmon scattering in electron transport is significant. Therefore, it is effective to use graded base in order to sweep out quasi-thermalized electrons. As for graded base, we carried out Monte Carlo Simulation under the condition that the total of graded energy and conduction band discontinuity between base and emitter is constant. Although the best graded energy to minimize base transit time is from 5kT to 7kT, small grading such as 1-2kT is also effective. When 2kT grading is introduced in 20nm base, 40% reduction of base transit time is calculated. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | HeteroJunction Bipolar Transistor(HBT) / Base Transit Time / Graded Base / MonteCarlo / Hole-Plasmon Scattering |
| Paper # | ED2008-212,MW2008-177 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2009/1/7(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Reduction of the Base Transit Time in Ultra-thin Graded-Base InP/GaInAs Heterojunction Bipolar Transistor |
| Sub Title (in English) | |
| Keyword(1) | HeteroJunction Bipolar Transistor(HBT) |
| Keyword(2) | Base Transit Time |
| Keyword(3) | Graded Base |
| Keyword(4) | MonteCarlo |
| Keyword(5) | Hole-Plasmon Scattering |
| 1st Author's Name | Takafumi UESAWA |
| 1st Author's Affiliation | Graduate School of Science and Engineering, Tokyo Institute of Technology() |
| 2nd Author's Name | Masayuki YAMADA |
| 2nd Author's Affiliation | Graduate School of Science and Engineering, Tokyo Institute of Technology |
| 3rd Author's Name | Yasuyuki MIYAMOTO |
| 3rd Author's Affiliation | Graduate School of Science and Engineering, Tokyo Institute of Technology |
| 4th Author's Name | Kazuhito FURUYA |
| 4th Author's Affiliation | Graduate School of Science and Engineering, Tokyo Institute of Technology |
| Date | 2009-01-15 |
| Paper # | ED2008-212,MW2008-177 |
| Volume (vol) | vol.108 |
| Number (no) | 376 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |