| Presentation | 2009-01-15 A Study on HBT RF Power Detectors with Directional Couplers on a GaAs Substrate Kazuya YAMAMOTO, Hitoshi KURUSU, Miyo MIYASHITA, Satoshi SUZUKI, Nobuyuki OGAWA, Masatoshi NAKAYAMA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper describes circuit design and measurement results of a phase-shifter built-in spiral directional coupler and its application to a GaAs integrated power detector for use in wireless applications. To enhance isolation and directivity characteristics, a 180゜ LC phase shifter is placed between the coupling port and isolation port in the coupler, because at the coupling port, the phase shifter cancels out leakage signal propagating from the output port to the coupling port. Measurement results of a prototype GaAs HBT RF power detector integrated with a phase-shifter built-in directional coupler on the same die are as follows. The coupler can exhibit high directivity of 27dB at 2.6GHz, which is about 9dB higher than that of the coupler without a phase shifter. The coupler-integrated detector can deliver a detection voltage of 0.5-2.2V over a 8-23-dBm input power range at 2.6GHz while drawing a current of less than 1.8mA from a 2.85-V supply. The measurement also shows that the detector is capable of suppressing power detection error within ±0.25dB under the 4:1 VSWR load mismatching condition. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Directional couplers / RF power detector / heterojunction bipolar transistors (HBTs) / MMIC |
| Paper # | ED2008-210,MW2008-175 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2009/1/7(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A Study on HBT RF Power Detectors with Directional Couplers on a GaAs Substrate |
| Sub Title (in English) | |
| Keyword(1) | Directional couplers |
| Keyword(2) | RF power detector |
| Keyword(3) | heterojunction bipolar transistors (HBTs) |
| Keyword(4) | MMIC |
| 1st Author's Name | Kazuya YAMAMOTO |
| 1st Author's Affiliation | High Frequency and Optical Device Works, Mitsubishi Electric Corporation() |
| 2nd Author's Name | Hitoshi KURUSU |
| 2nd Author's Affiliation | High Frequency and Optical Device Works, Mitsubishi Electric Corporation |
| 3rd Author's Name | Miyo MIYASHITA |
| 3rd Author's Affiliation | High Frequency and Optical Device Works, Mitsubishi Electric Corporation |
| 4th Author's Name | Satoshi SUZUKI |
| 4th Author's Affiliation | High Frequency and Optical Device Works, Mitsubishi Electric Corporation |
| 5th Author's Name | Nobuyuki OGAWA |
| 5th Author's Affiliation | High Frequency and Optical Device Works, Mitsubishi Electric Corporation |
| 6th Author's Name | Masatoshi NAKAYAMA |
| 6th Author's Affiliation | High Frequency and Optical Device Works, Mitsubishi Electric Corporation |
| Date | 2009-01-15 |
| Paper # | ED2008-210,MW2008-175 |
| Volume (vol) | vol.108 |
| Number (no) | 376 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |