| Presentation | 2008-12-05 Improved Performance of an SiC MOSFET by a Three-Dimensional Gate Structure Yuichiro NANEN, Hironori YOSHIOKA, Masato NOBORIO, Jun SUDA, Tsunenobu KIMOTO, |
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| Abstract(in Japanese) | (See Japanese page) | |
| Abstract(in English) | 4H-SiC (0001) MOSFETs with a three-dimensional gate structure, which has side-wall channels on the {112^^-0} face have been fabricated. Drain current is expected to increase due to geometrical effects of the three-dimensional gate structure and high channel mobility on the {112^^-0} face. The fabricated MOSFETs have exhibited superior characteristics: the subthreshold swing and V_ | are, 210mV/decade and 3.8V, respectively. The drain current normalized by the gate width is increasing with decreasing the gate width. The normalized drain current of a 1μm-wide MOSFET is twenty times higher than that of a conventional planar MOSFET. |
| Keyword(in Japanese) | (See Japanese page) | |
| Keyword(in English) | silicon carbide (SiC) / MOSFET / three-dimensional gate structure | |
| Paper # | SDM2008-191 | |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2008/11/28(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Improved Performance of an SiC MOSFET by a Three-Dimensional Gate Structure |
| Sub Title (in English) | |
| Keyword(1) | silicon carbide (SiC) |
| Keyword(2) | MOSFET |
| Keyword(3) | three-dimensional gate structure |
| 1st Author's Name | Yuichiro NANEN |
| 1st Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University() |
| 2nd Author's Name | Hironori YOSHIOKA |
| 2nd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| 3rd Author's Name | Masato NOBORIO |
| 3rd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| 4th Author's Name | Jun SUDA |
| 4th Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| 5th Author's Name | Tsunenobu KIMOTO |
| 5th Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| Date | 2008-12-05 |
| Paper # | SDM2008-191 |
| Volume (vol) | vol.108 |
| Number (no) | 335 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |