| Presentation | 2008-12-20 Effect of parasitic gate fringing capacitance on the terahertz plasma resonance in HEMT's Nobuhiro MAGOME, Takuya NISHIMURA, Irina KHMYROVA, Tetsuya SUEMITSU, Wojtek KNAP, Taiichi OTSUJI, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Influence of fringing electric field due to nonideality of the gate-two-dimensional electron gas (2DEG) channel capacitance on fundamental resonant frequency of plasma waves in the high-electron mobility transistor (HEMT) channel was investigated. Cascaded transmission line (TL) equivalent circuit model was developed to represent the gated and ungated fringed regions of the 2DEG channel. Spatial distribution of sheet electron density in the fringed region of the 2DEG channel and expression for fundamental resonant frequency of plasma oscillation were obtained. Results of calculation and IsSpice simulation based on cascaded TL model show that fringing effects can be the cause of the fundamental plasma frequency reduction. The results obtained are in rather good agreement with experimental data. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | resonant frequency / plasma waves / HEMT / THz / fringing effects / cascaded TL model |
| Paper # | ED2008-195 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2008/12/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effect of parasitic gate fringing capacitance on the terahertz plasma resonance in HEMT's |
| Sub Title (in English) | |
| Keyword(1) | resonant frequency |
| Keyword(2) | plasma waves |
| Keyword(3) | HEMT |
| Keyword(4) | THz |
| Keyword(5) | fringing effects |
| Keyword(6) | cascaded TL model |
| 1st Author's Name | Nobuhiro MAGOME |
| 1st Author's Affiliation | Research Institute of electric communication, Tohoku University() |
| 2nd Author's Name | Takuya NISHIMURA |
| 2nd Author's Affiliation | Research Institute of electric communication, Tohoku University |
| 3rd Author's Name | Irina KHMYROVA |
| 3rd Author's Affiliation | Computational Nanoelectronics Laboratory, University of Aizu |
| 4th Author's Name | Tetsuya SUEMITSU |
| 4th Author's Affiliation | Research Institute of electric communication, Tohoku University |
| 5th Author's Name | Wojtek KNAP |
| 5th Author's Affiliation | GES-UMR5650, Universite Montpellier 2 and CNRS |
| 6th Author's Name | Taiichi OTSUJI |
| 6th Author's Affiliation | Research Institute of electric communication, Tohoku University |
| Date | 2008-12-20 |
| Paper # | ED2008-195 |
| Volume (vol) | vol.108 |
| Number (no) | 369 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |