Presentation 2008-12-19
60GHz High Isolation SPDT MMIC Switch
Yoshihiro TSUKAHARA, Hirotaka AMASUGA, Seiki GOTO, Tomoki OKU, Takahide ISHIKAWA,
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Abstract(in English) This paper describes the successful development of a 60GHz high isolation SPDT MMIC switch for wireless applications. In order to improve the isolation, the shunt pHEMT resonator, which is reduced on-state resistance of FET, is proposed. The developed V-band SPDT switch shows an isolation of over 45dB and an insertion loss of 1.4dB at 60GHz. Input and output return losses are better than 18dB in ON-state. Moreover, the switch requires no complex off-chip bias circuitry and consumes no DC power. These performances of high isolation and low insertion loss presented here are the best among the V-band pHEMT MMIC switches.
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Keyword(in English) 60GHz / SPDT / switch / Isolation / resonator
Paper # ED2008-188
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Committee ED
Conference Date 2008/12/12(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) 60GHz High Isolation SPDT MMIC Switch
Sub Title (in English)
Keyword(1) 60GHz
Keyword(2) SPDT
Keyword(3) switch
Keyword(4) Isolation
Keyword(5) resonator
1st Author's Name Yoshihiro TSUKAHARA
1st Author's Affiliation High Frequency and Optical Device Works, Mitsubishi Electric Corporation()
2nd Author's Name Hirotaka AMASUGA
2nd Author's Affiliation High Frequency and Optical Device Works, Mitsubishi Electric Corporation
3rd Author's Name Seiki GOTO
3rd Author's Affiliation High Frequency and Optical Device Works, Mitsubishi Electric Corporation
4th Author's Name Tomoki OKU
4th Author's Affiliation High Frequency and Optical Device Works, Mitsubishi Electric Corporation
5th Author's Name Takahide ISHIKAWA
5th Author's Affiliation High Frequency and Optical Device Works, Mitsubishi Electric Corporation
Date 2008-12-19
Paper # ED2008-188
Volume (vol) vol.108
Number (no) 369
Page pp.pp.-
#Pages 5
Date of Issue