Presentation 2008-11-14
In-plane anisotropy of electric field in organic field effect transistor observed by optical second harmonic generation measurement
MOTOHARU Nakao, Takaaki MANAKA, Martin WEIS, Eunju LIM, Mitsumasa IWAMOTO,
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Abstract(in English) Electric field E, mobility μ and carrier density en are key parameters used to discuss the operation mechanism of Organic Field transistors (OFETs). OFETs are mainly ruled by carriers injected from the source electrode. Hence space charge field is formed in OFETs. It is a significant issue to evaluate electric field distribution along the FET channel. In our previous studies, we proposed a novel technique for evaluating the electric field distribution in OFETs using the second harmonic generation (SHG) activated by the d.c. electric field induced polarization of organic semiconductor. In this work, in-plane anisotropy of electric field in pentacene FET was investigated with polarized SH light. Consequently, d.c. electric field along the channel is shown to be determined for pentacene films with crystalline domain size of about 1μm.
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Keyword(in English) organic field effect transistor / pentacene / second harmonic generation (SHG)
Paper # OME2008-71,OPE2008-131
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Committee OME
Conference Date 2008/11/7(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) In-plane anisotropy of electric field in organic field effect transistor observed by optical second harmonic generation measurement
Sub Title (in English)
Keyword(1) organic field effect transistor
Keyword(2) pentacene
Keyword(3) second harmonic generation (SHG)
1st Author's Name MOTOHARU Nakao
1st Author's Affiliation Department of Physical Electronics, Tokyo Institute of Technology()
2nd Author's Name Takaaki MANAKA
2nd Author's Affiliation Department of Physical Electronics, Tokyo Institute of Technology
3rd Author's Name Martin WEIS
3rd Author's Affiliation /
4th Author's Name Eunju LIM
4th Author's Affiliation Department of Physical Electronics, Tokyo Institute of Technology
5th Author's Name Mitsumasa IWAMOTO
5th Author's Affiliation
Date 2008-11-14
Paper # OME2008-71,OPE2008-131
Volume (vol) vol.108
Number (no) 293
Page pp.pp.-
#Pages 5
Date of Issue