Presentation 2008-11-07
Electrical properties of bottom contact pentacene FET on 3D processed S-D electrodes
Tatsuya FUJIMORI, Yusuke URA, Eiji ITOH, Keiichi MIYAIRI,
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Abstract(in English) We have fabricated an unique bottom contact type pentacene field effect transistor (FET) on 3-D structured source-drain electrodes having a 200nm (or 400nm)-thick polyimide layer underneath S-D electrodes, and on aluminum oxide insulator. The unwanted bare polyimide layer was removed by a self-alignment dry etch in O_2 plasma using source-drain electrodes as a mask. The field effect mobility of this new type bottom contact FET was much higher than that of traditional bottom contact pentacene FET probably due to the improved morphology of pentacene film at the region close to Au/pentacene interface.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) OFET / Pentacene / Al_2O_3 / Bottom contact
Paper # OME2008-61
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Committee OME
Conference Date 2008/10/31(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Electrical properties of bottom contact pentacene FET on 3D processed S-D electrodes
Sub Title (in English)
Keyword(1) OFET
Keyword(2) Pentacene
Keyword(3) Al_2O_3
Keyword(4) Bottom contact
1st Author's Name Tatsuya FUJIMORI
1st Author's Affiliation Faculty of Engineering, Shinshu University()
2nd Author's Name Yusuke URA
2nd Author's Affiliation / /
3rd Author's Name Eiji ITOH
3rd Author's Affiliation
4th Author's Name Keiichi MIYAIRI
4th Author's Affiliation
Date 2008-11-07
Paper # OME2008-61
Volume (vol) vol.108
Number (no) 280
Page pp.pp.-
#Pages 6
Date of Issue