| Presentation | 2008-11-14 A Quantum Mechanical Study of Effect of Single Attractive Ions on Electron Transport in Nanoscale Transistors Yoshinari KAMAKURA, Gennady MIL'NIKOV, Nobuya MORI, Tatsuya EZAKI, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A comprehensive and rigorous study of the impact of single attractive ion in undoped channel MGFETs is presented by using a new 3D NEGF technique. A single donor induces VT shift, and its impact is most significant when the donor is located at the top of the potential barrier, while on current is not affected so much due to the screening effect. To reduce the intrinsic device parameter fluctuation, control of lateral S/D doing abruptness is important, and gate-all-around structure has better robustness than the double gate structure. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | nonequilibrium Green's function method / MOSFET / device simulation / fluctuation |
| Paper # | SDM2008-179 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2008/11/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A Quantum Mechanical Study of Effect of Single Attractive Ions on Electron Transport in Nanoscale Transistors |
| Sub Title (in English) | |
| Keyword(1) | nonequilibrium Green's function method |
| Keyword(2) | MOSFET |
| Keyword(3) | device simulation |
| Keyword(4) | fluctuation |
| 1st Author's Name | Yoshinari KAMAKURA |
| 1st Author's Affiliation | Graduate School of Engineering, Osaka University() |
| 2nd Author's Name | Gennady MIL'NIKOV |
| 2nd Author's Affiliation | Graduate School of Engineering, Osaka University |
| 3rd Author's Name | Nobuya MORI |
| 3rd Author's Affiliation | Graduate School of Engineering, Osaka University |
| 4th Author's Name | Tatsuya EZAKI |
| 4th Author's Affiliation | Graduate School of Advanced Sciences of Matter, Hiroshima University |
| Date | 2008-11-14 |
| Paper # | SDM2008-179 |
| Volume (vol) | vol.108 |
| Number (no) | 292 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |