| Presentation | 2008-11-28 Detection mechanisms of Pd/AlGaN/GaN HEMT-based hydrogen gas sensors Noriyuki TAKAHASHI, Seiji NAKAMURA, Tsugunori OKUMURA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The hydrogen sensing properties of AlGaN/GaN high electron mobility transistors with Pd gate electrodes are demonstrated for ppm-order detection. We found that the 1ppm hydrogen in air can be detected by the fabricated devices as a current variation of 1.6mA. By using the least-square fit to the experimental data, the reliable lower detection value of hydrogen concentration for the present device can be estimated to be about 0.5ppm, i.e., a natural hydrogen concentration in the air. In addition, the shorter turn-on and turn-off transient times have been estimated to be about 23 and 33 seconds at 110℃, respectively, in the case of the 100ppm hydrogen. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | hydrogen gas sensor / AlGaN/GaN / high electron mobility transistor / catalytic action / part par million / palladium |
| Paper # | ED2008-183,CPM2008-132,LQE2008-127 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2008/11/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Detection mechanisms of Pd/AlGaN/GaN HEMT-based hydrogen gas sensors |
| Sub Title (in English) | |
| Keyword(1) | hydrogen gas sensor |
| Keyword(2) | AlGaN/GaN |
| Keyword(3) | high electron mobility transistor |
| Keyword(4) | catalytic action |
| Keyword(5) | part par million |
| Keyword(6) | palladium |
| 1st Author's Name | Noriyuki TAKAHASHI |
| 1st Author's Affiliation | Department of Electrorical and Electronic Engineering, Graduate School of Science & Engineering & Faculty of Engineering, Tokyo Metropolitan University() |
| 2nd Author's Name | Seiji NAKAMURA |
| 2nd Author's Affiliation | Department of Electrorical and Electronic Engineering, Graduate School of Science & Engineering & Faculty of Engineering, Tokyo Metropolitan University |
| 3rd Author's Name | Tsugunori OKUMURA |
| 3rd Author's Affiliation | Department of Electrorical and Electronic Engineering, Graduate School of Science & Engineering & Faculty of Engineering, Tokyo Metropolitan University |
| Date | 2008-11-28 |
| Paper # | ED2008-183,CPM2008-132,LQE2008-127 |
| Volume (vol) | vol.108 |
| Number (no) | 321 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |