Presentation 2008-11-28
Simulation of Bending Deformation and Two-dimensional Electron Gas Density in AlGaN/GaN Hetero-Structures
Hajime TSUKAHARA, Seiji NAKAMURA, Tsugunori OKUMURA,
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Abstract(in English) We have examined the effect on a two-dimensional electron gas (2DEG) in AlGaN/GaN hetero structures by using the "micro-origami" method. In this study, lattice strain, bending deformation, and variations of piezoelectric charge as well as 2DEG density were analyzed for a basic cantilever of the bimetal structure. These simulations were performed by using the finite element method and the finite difference method. As a result, the 2DEG density at the Al_<0.2>Ga_<0.8>N/GaN hetero-interface was found to decrease approximately 37%. The result suggests that the 2DEG density is controllable in the micro-origami type of MEMS structures.
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Keyword(in English) AlGaN/GaN / Piezoelectric charges / 2DEG / lattice strain / MEMS / micro-origami
Paper # ED2008-182,CPM2008-131,LQE2008-126
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Committee ED
Conference Date 2008/11/20(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Simulation of Bending Deformation and Two-dimensional Electron Gas Density in AlGaN/GaN Hetero-Structures
Sub Title (in English)
Keyword(1) AlGaN/GaN
Keyword(2) Piezoelectric charges
Keyword(3) 2DEG
Keyword(4) lattice strain
Keyword(5) MEMS
Keyword(6) micro-origami
1st Author's Name Hajime TSUKAHARA
1st Author's Affiliation Department of Electrical and Electronic Engineering, Graduate School of Science and Engineering, Tokyo Metropolitan University()
2nd Author's Name Seiji NAKAMURA
2nd Author's Affiliation /
3rd Author's Name Tsugunori OKUMURA
3rd Author's Affiliation
Date 2008-11-28
Paper # ED2008-182,CPM2008-131,LQE2008-126
Volume (vol) vol.108
Number (no) 321
Page pp.pp.-
#Pages 5
Date of Issue