| Presentation | 2008-11-28 Depth profiles of strain in AlGaN/GaN heterostructures grown on Si by electron backscatter diffraction technique Teruki Ishido, Hisayoshi Matsuo, Takuma Katayama, Tetsuzo Ueda, Kaoru Inoue, Daisuke Ueda, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Electron backscatter diffraction (EBSD) technique has been applied to the strain distribution measurements for GaN based heterostructures for the first time. From the results for the simple AlGaN/GaN structures on GaN substrates, it was confirmed that this method has high spatial resolution of about 80nm and gives quantitatively reasonable strain values. The EBSD technique was then applied to the heterostructures grown on Si substrates to study the role of an AlN/GaN multilayer prior to the growth of a thick GaN layer. It was clarified that there exists a compressive strain in the GaN layer, especially near the interface to the AlN/GaN multilayer. This compressive strain will be relevant to the suppression of the crack generation in the thick GaN layer. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | EBSD / GaN / strain / AlN/GaN multilayer |
| Paper # | ED2008-181,CPM2008-130,LQE2008-125 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2008/11/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Depth profiles of strain in AlGaN/GaN heterostructures grown on Si by electron backscatter diffraction technique |
| Sub Title (in English) | |
| Keyword(1) | EBSD |
| Keyword(2) | GaN |
| Keyword(3) | strain |
| Keyword(4) | AlN/GaN multilayer |
| 1st Author's Name | Teruki Ishido |
| 1st Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation() |
| 2nd Author's Name | Hisayoshi Matsuo |
| 2nd Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation |
| 3rd Author's Name | Takuma Katayama |
| 3rd Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation |
| 4th Author's Name | Tetsuzo Ueda |
| 4th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation |
| 5th Author's Name | Kaoru Inoue |
| 5th Author's Affiliation | R & D Advanced Technology Research Laboratories, Panasonic Corporation |
| 6th Author's Name | Daisuke Ueda |
| 6th Author's Affiliation | R & D Advanced Technology Research Laboratories, Panasonic Corporation |
| Date | 2008-11-28 |
| Paper # | ED2008-181,CPM2008-130,LQE2008-125 |
| Volume (vol) | vol.108 |
| Number (no) | 321 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |