| Presentation | 2008-11-28 Flat Surface and High Electron Mobility of InAlN/AlGaN/AlN/GaN Heterostructures Masanobu HIROKI, Narihiko MAEDA, Takashi KOBAYASHI, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We fabricated In_xAl_<1-x>N/Al_<0.38>Ga_<0.62>N/AlN/GaN hetero-structures with flat surfaces and high electron mobility. The density of the two-dimensional electron gas varies over a wide range and decreases from 2.3x10^<13> to 9x10^<12>cm^<-2>. The electron mobility is higher than that of conventional InAlN/AlN/GaN in the range of In content in InAlN from 0.13 to 0.31. The mobility increases from 1050 to 1960cm^2/V・s with increasing In content. A high transconductance of 230mS/mm and a large drain current of 1.2A/mm are obtained in field effect transistors made from both structures. For the new structure, the subthreshold swing is lowered 1.5 to 0.6V/dec. and the dark current is reduced 10^<-2> to 10^<-3>A/mm. The smoother surface of the new structure improves these parameters. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / AlGaN / InAlN / HEMT / HFET |
| Paper # | ED2008-180,CPM2008-129,LQE2008-124 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
|---|---|
| Conference Date | 2008/11/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
|---|---|
| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Flat Surface and High Electron Mobility of InAlN/AlGaN/AlN/GaN Heterostructures |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | AlGaN |
| Keyword(3) | InAlN |
| Keyword(4) | HEMT |
| Keyword(5) | HFET |
| 1st Author's Name | Masanobu HIROKI |
| 1st Author's Affiliation | NTT Photonics. Laboratories, NTT Corporation() |
| 2nd Author's Name | Narihiko MAEDA |
| 2nd Author's Affiliation | NTT Photonics. Laboratories, NTT Corporation |
| 3rd Author's Name | Takashi KOBAYASHI |
| 3rd Author's Affiliation | NTT Photonics. Laboratories, NTT Corporation:(Present office)NTT Advanced Technology Corporation |
| Date | 2008-11-28 |
| Paper # | ED2008-180,CPM2008-129,LQE2008-124 |
| Volume (vol) | vol.108 |
| Number (no) | 321 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |