| Presentation | 2008-11-28 Study on AlGaN/GaN HEMTs on Si(111) substrates with thick AlGaN/GaN, GaN/AlN and AlGaN/GaN multilayers Takaaki SUZUE, Masanori SUZUKI, Yukiyasu NOMURA, Takashi EGAWA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The study of AlGaN/GaN HEMTs by growing thick GaN on Si substrate was demonstrated using multilayer structure. The various multilayers grown were namely AlGaN/GaN, GaN/AlN and AlGaN/AlN and the bowing parameters of the AlGaN/GaN grown were studied. The bowing parameters were found to decrease as we move from pairs of AlGaN/GaN, GaN/AlN and AlGaN/AlN with increased Al concentration. This is due to the compression strain that originated from the difference in the lattice constant between GaN and the multilayer structure. By using the AlGaN/AlN multilayer structure, a total film thickness as high as 6μm was achieved without cracks. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Si substrate / GaN / AlGaN/GaN / MOCVD / HEMT |
| Paper # | ED2008-179,CPM2008-128,LQE2008-123 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2008/11/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study on AlGaN/GaN HEMTs on Si(111) substrates with thick AlGaN/GaN, GaN/AlN and AlGaN/GaN multilayers |
| Sub Title (in English) | |
| Keyword(1) | Si substrate |
| Keyword(2) | GaN |
| Keyword(3) | AlGaN/GaN |
| Keyword(4) | MOCVD |
| Keyword(5) | HEMT |
| 1st Author's Name | Takaaki SUZUE |
| 1st Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology() |
| 2nd Author's Name | Masanori SUZUKI |
| 2nd Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| 3rd Author's Name | Yukiyasu NOMURA |
| 3rd Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| 4th Author's Name | Takashi EGAWA |
| 4th Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| Date | 2008-11-28 |
| Paper # | ED2008-179,CPM2008-128,LQE2008-123 |
| Volume (vol) | vol.108 |
| Number (no) | 321 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |