Presentation | 2008-11-28 An Over 100W AlGaN/GaN Enhancement-Mode HEMT Power Amplifier Toshihiro OHKI, Toshihide KIKKAWA, Masahito KANAMURA, Kenji IMANISHI, Kozo MAKIYAMA, Naoya OKAMOTO, Kazukiyo JOSHIN, Naoki HARA, |
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PDF Download Page | PDF download Page Link | |
Abstract(in Japanese) | (See Japanese page) | |
Abstract(in English) | A novel piezoelectric-induced cap structure in an AlGaN/GaN high electron mobility transistor (HEMT) was developed for enhancement-mode (E-mode) operation with high breakdown voltage (BV_) is +0.25V with a high BV_ | |
Keyword(in Japanese) | (See Japanese page) | |
Keyword(in English) | GaN / AlGaN / HEMT / FET / E-mode / normally-off / breakdown voltage / gate recess | |
Paper # | ED2008-178,CPM2008-127,LQE2008-122 | |
Date of Issue |
Conference Information | |
Committee | ED |
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Conference Date | 2008/11/20(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | An Over 100W AlGaN/GaN Enhancement-Mode HEMT Power Amplifier |
Sub Title (in English) | |
Keyword(1) | GaN |
Keyword(2) | AlGaN |
Keyword(3) | HEMT |
Keyword(4) | FET |
Keyword(5) | E-mode |
Keyword(6) | normally-off |
Keyword(7) | breakdown voltage |
Keyword(8) | gate recess |
1st Author's Name | Toshihiro OHKI |
1st Author's Affiliation | Fujitsu Ltd.:Fujitsu Laboratories Ltd.() |
2nd Author's Name | Toshihide KIKKAWA |
2nd Author's Affiliation | Fujitsu Ltd.:Fujitsu Laboratories Ltd. |
3rd Author's Name | Masahito KANAMURA |
3rd Author's Affiliation | Fujitsu Ltd.:Fujitsu Laboratories Ltd. |
4th Author's Name | Kenji IMANISHI |
4th Author's Affiliation | Fujitsu Ltd.:Fujitsu Laboratories Ltd. |
5th Author's Name | Kozo MAKIYAMA |
5th Author's Affiliation | Fujitsu Ltd.:Fujitsu Laboratories Ltd. |
6th Author's Name | Naoya OKAMOTO |
6th Author's Affiliation | Fujitsu Ltd.:Fujitsu Laboratories Ltd. |
7th Author's Name | Kazukiyo JOSHIN |
7th Author's Affiliation | Fujitsu Ltd.:Fujitsu Laboratories Ltd. |
8th Author's Name | Naoki HARA |
8th Author's Affiliation | Fujitsu Ltd.:Fujitsu Laboratories Ltd. |
Date | 2008-11-28 |
Paper # | ED2008-178,CPM2008-127,LQE2008-122 |
Volume (vol) | vol.108 |
Number (no) | 321 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |