Presentation 2008-11-28
An Over 100W AlGaN/GaN Enhancement-Mode HEMT Power Amplifier
Toshihiro OHKI, Toshihide KIKKAWA, Masahito KANAMURA, Kenji IMANISHI, Kozo MAKIYAMA, Naoya OKAMOTO, Kazukiyo JOSHIN, Naoki HARA,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A novel piezoelectric-induced cap structure in an AlGaN/GaN high electron mobility transistor (HEMT) was developed for enhancement-mode (E-mode) operation with high breakdown voltage (BV_), high maximum drain current density (I_) and small current collapse. Our developed cap structure consists of a thin GaN/AlN/GaN triple-layer, which reduces the sheet resistance (R_) due to conduction band bending. The threshold voltage (V_) is +0.25V with a high BV_ of 336V, a high I_ of 520mA/mm and small current collapse by using the developed cap structure and a gate recess technique. The single-chip AlGaN/GaN E-mode HEMT amplifier achieved a high output power of 126W at 2.5GHz with improved distortion characteristics. This is the first report of an AlGaN/GaN E-mode HEMT with an output power of over 100W. The developed triple-layer cap structure is a candidate for realizing high-power millimeter-wave applications.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaN / AlGaN / HEMT / FET / E-mode / normally-off / breakdown voltage / gate recess
Paper # ED2008-178,CPM2008-127,LQE2008-122
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Conference Information
Committee ED
Conference Date 2008/11/20(1days)
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Paper Information
Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) An Over 100W AlGaN/GaN Enhancement-Mode HEMT Power Amplifier
Sub Title (in English)
Keyword(1) GaN
Keyword(2) AlGaN
Keyword(3) HEMT
Keyword(4) FET
Keyword(5) E-mode
Keyword(6) normally-off
Keyword(7) breakdown voltage
Keyword(8) gate recess
1st Author's Name Toshihiro OHKI
1st Author's Affiliation Fujitsu Ltd.:Fujitsu Laboratories Ltd.()
2nd Author's Name Toshihide KIKKAWA
2nd Author's Affiliation Fujitsu Ltd.:Fujitsu Laboratories Ltd.
3rd Author's Name Masahito KANAMURA
3rd Author's Affiliation Fujitsu Ltd.:Fujitsu Laboratories Ltd.
4th Author's Name Kenji IMANISHI
4th Author's Affiliation Fujitsu Ltd.:Fujitsu Laboratories Ltd.
5th Author's Name Kozo MAKIYAMA
5th Author's Affiliation Fujitsu Ltd.:Fujitsu Laboratories Ltd.
6th Author's Name Naoya OKAMOTO
6th Author's Affiliation Fujitsu Ltd.:Fujitsu Laboratories Ltd.
7th Author's Name Kazukiyo JOSHIN
7th Author's Affiliation Fujitsu Ltd.:Fujitsu Laboratories Ltd.
8th Author's Name Naoki HARA
8th Author's Affiliation Fujitsu Ltd.:Fujitsu Laboratories Ltd.
Date 2008-11-28
Paper # ED2008-178,CPM2008-127,LQE2008-122
Volume (vol) vol.108
Number (no) 321
Page pp.pp.-
#Pages 6
Date of Issue