| Presentation | 2008-11-28 Normally-off mode AlGaN/GaN HEMTs with p-InGaN Cap Layer Xu LI, Masahito KUROUCHI, Shigeru KISHIMOTO, Takashi MIZUTANI, Fumihiko NAKAMURA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have fabricated AlGaN/GaN HEMTs with a thin p-InGaN cap layer and measured I-V characteristics of the devices. For the activation of M_g in p-InGaN cap layer, annealing at 800℃ was relatively good. Compared to AlGaN/GaN HEMTs without InGaN cap layer and i-InGaN cap HEMTs, the threshold voltage of p-InGaN cap (800℃) HEMTs shifted about 2.2V, 1.3V respectively and was 1.1V. The complete normally-off operation of AlGaN/GaN HEMTs has been realized. For p-InGaN cap (800℃) HEMTs, a higher g_ |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN/GaN HEMT / p-InGaN cap / activation annealing / normally-off / gate leakage current |
| Paper # | ED2008-177,CPM2008-126,LQE2008-121 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2008/11/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Normally-off mode AlGaN/GaN HEMTs with p-InGaN Cap Layer |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN HEMT |
| Keyword(2) | p-InGaN cap |
| Keyword(3) | activation annealing |
| Keyword(4) | normally-off |
| Keyword(5) | gate leakage current |
| 1st Author's Name | Xu LI |
| 1st Author's Affiliation | Quantum Engineering, Graduate School of Engineering, Nagoya University() |
| 2nd Author's Name | Masahito KUROUCHI |
| 2nd Author's Affiliation | Quantum Engineering, Graduate School of Engineering, Nagoya University |
| 3rd Author's Name | Shigeru KISHIMOTO |
| 3rd Author's Affiliation | Quantum Engineering, Graduate School of Engineering, Nagoya University |
| 4th Author's Name | Takashi MIZUTANI |
| 4th Author's Affiliation | Quantum Engineering, Graduate School of Engineering, Nagoya University |
| 5th Author's Name | Fumihiko NAKAMURA |
| 5th Author's Affiliation | POWDEC K.K. |
| Date | 2008-11-28 |
| Paper # | ED2008-177,CPM2008-126,LQE2008-121 |
| Volume (vol) | vol.108 |
| Number (no) | 321 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |