| Presentation | 2008-11-28 Fabrication and Characterization of AlGaN/GaN MOSFETs with HfO_2 Gate Insulator deposited by ALD Yuji GODA, Yoshihisa HAYASHI, Yutaka OHNO, Shigeru KISHIMOTO, Takashi MIZUTANI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The AlGaN/GaN MOSFETs with HfO_2 as a gate insulator deposited by ALD has been fabricated and characterized. The lower the deposition temperature was, the smaller the gate leak current was. On the other hand, g_m max was obtained for the device with HfO_2 deposited at 250 degC. The threshold voltage was linearly dependent on the thickness of the HfO_2. This means that trapped charge at HfO_2/AlGaN interface was responsible for this threshold voltage change. It has been shown that the interface states between HfO_2 and AlGaN were decreased by annealing in O_2 atmosphere. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN/GaN / MOSFET / HfO_2 / ALD |
| Paper # | ED2008-176,CPM2008-125,LQE2008-120 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2008/11/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication and Characterization of AlGaN/GaN MOSFETs with HfO_2 Gate Insulator deposited by ALD |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN |
| Keyword(2) | MOSFET |
| Keyword(3) | HfO_2 |
| Keyword(4) | ALD |
| 1st Author's Name | Yuji GODA |
| 1st Author's Affiliation | Quantum Engineering, Graduate School of Engineering, Nagoya University() |
| 2nd Author's Name | Yoshihisa HAYASHI |
| 2nd Author's Affiliation | Quantum Engineering, Graduate School of Engineering, Nagoya University |
| 3rd Author's Name | Yutaka OHNO |
| 3rd Author's Affiliation | Quantum Engineering, Graduate School of Engineering, Nagoya University |
| 4th Author's Name | Shigeru KISHIMOTO |
| 4th Author's Affiliation | Quantum Engineering, Graduate School of Engineering, Nagoya University |
| 5th Author's Name | Takashi MIZUTANI |
| 5th Author's Affiliation | Quantum Engineering, Graduate School of Engineering, Nagoya University |
| Date | 2008-11-28 |
| Paper # | ED2008-176,CPM2008-125,LQE2008-120 |
| Volume (vol) | vol.108 |
| Number (no) | 321 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |