Presentation	2008-11-28 Device simulation of HfO_2/AlGaN/GaN MOSFET : effects of HfO_2/AlGaN interface Yoshihisa HAYASHI, Shun SUGIURA, Shigeru KISHIMOTO, Takashi MIZUTANI,
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Abstract(in English)	Two-dimensional device simulations of HfO_2/AlGaN/GaN MOSFETs have been carried out to investigate the operation mechanism and the effects of interface traps on the device characteristics. First, devices without the traps were studied. Although the transconductance increases with increase in the gate voltage for small V_, it decreases for larger V_. This is because a 2nd channel is formed at HfO_2/AlGaN interface where the electron velocity is rather low. Next, simulations for devices with donor type traps at HfO_2/AlGaN interface have been performed. The shift of the threshold voltage to the negative direction and the decrease in g_m different from previous g_m decrease are observed. The g_m decrease is caused because the increase of V_ is expended to increase the trapped electrons and can not change the electron density at the AlGaN/GaN interface. Amounts of the threshold voltage shift and the g_m decrease are dependent on the trap concentration. It has been shown that if the trap concentration is less than 3.5x10^<11>cm^<-2>, the threshold voltage shift is less than 0.3V and the g_m decrease is less than 10%.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	HfO_2/AlGaN/GaN MOSFET / device simulation / interface trap
Paper #	ED2008-175,CPM2008-124,LQE2008-119
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Conference Information
Committee	ED
Conference Date	2008/11/20(1days)
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Paper Information
Registration To	Electron Devices (ED)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Device simulation of HfO_2/AlGaN/GaN MOSFET : effects of HfO_2/AlGaN interface
Sub Title (in English)
Keyword(1)	HfO_2/AlGaN/GaN MOSFET
Keyword(2)	device simulation
Keyword(3)	interface trap
1st Author's Name	Yoshihisa HAYASHI
1st Author's Affiliation	Department of Quantum Engineering, Nagoya University()
2nd Author's Name	Shun SUGIURA
2nd Author's Affiliation	Department of Quantum Engineering, Nagoya University
3rd Author's Name	Shigeru KISHIMOTO
3rd Author's Affiliation	Department of Quantum Engineering, Nagoya University
4th Author's Name	Takashi MIZUTANI
4th Author's Affiliation	Department of Quantum Engineering, Nagoya University
Date	2008-11-28
Paper #	ED2008-175,CPM2008-124,LQE2008-119
Volume (vol)	vol.108
Number (no)	321
Page	pp.pp.-
#Pages	6
Date of Issue