| Presentation | 2008-11-28 Optimum Design of AlGaN/GaN HEMTs with a Field Plate Ryosuke Sakai, Tomotaka Okai, Kenji Shiojima, Masaaki Kuzuhara, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have analyzed the electric field distribution for AlGaN/GaN HEMTs with various types of graded field plates using an ensemble Monte Carlo 2D device simulation. It was found that the graded field plate, where the dielectric film thickness under the field plate gradually increases along gate to drain direction, was effective to minimize the peak electric field strength in the channel layer. Empirical equations expressing the breakdown voltage as functions of device parameters have been derived. We have also analyzed the breakdown characteristics, taking breakdown fields in semiconductor materials as well as those in dielectric materials into account. Simulation results show that a dielectric film with a wide bandgap and a high dielectric constant, such as Al_2O_3, is desirable to ensure excellent breakdown characteristics. The highest breakdown voltage of around 3000V is predicted for a device with a graded field plate length of 5μm. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | field plate / GaN / HEMT / breakdown voltage / Monte Carlo simulation |
| Paper # | ED2008-174,CPM2008-123,LQE2008-118 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2008/11/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Optimum Design of AlGaN/GaN HEMTs with a Field Plate |
| Sub Title (in English) | |
| Keyword(1) | field plate |
| Keyword(2) | GaN |
| Keyword(3) | HEMT |
| Keyword(4) | breakdown voltage |
| Keyword(5) | Monte Carlo simulation |
| 1st Author's Name | Ryosuke Sakai |
| 1st Author's Affiliation | Graduate School of Engineering, University of Fukui() |
| 2nd Author's Name | Tomotaka Okai |
| 2nd Author's Affiliation | Graduate School of Engineering, University of Fukui |
| 3rd Author's Name | Kenji Shiojima |
| 3rd Author's Affiliation | Graduate School of Engineering, University of Fukui |
| 4th Author's Name | Masaaki Kuzuhara |
| 4th Author's Affiliation | Graduate School of Engineering, University of Fukui |
| Date | 2008-11-28 |
| Paper # | ED2008-174,CPM2008-123,LQE2008-118 |
| Volume (vol) | vol.108 |
| Number (no) | 321 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |