| Presentation | 2008-11-28 Theoretical Calculations of Polarization Properties in InGaN Quantum Wells on Non-C (Al)InGaN Alloy Substrates A. Atsushi YAMAGUCHI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Polarization properties in InGaN quantum wells on non-C AlInGaN alloy substrates are theoretically investigated. It is shown that the polarization direction of quantum-well emission switches depending on the substrate alloy composition, substrate orientation and quantum well width, and that these polarization switches are caused by the strain anisotropy and quantum confinement effects in the quantum wells. On the basis of the calculation results, it is predicted that the utilization of InGaN or AlInGaN alloy substrates is beneficial to obtain desirable polarization properties for the formation of cleaved-facet cavity mirrors in laser diodes on non-C substrates. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | optical anisotropy / polarization properties / InGaN quantum wells / alloy substrates / valence band / strain |
| Paper # | ED2008-172,CPM2008-121,LQE2008-116 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2008/11/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Theoretical Calculations of Polarization Properties in InGaN Quantum Wells on Non-C (Al)InGaN Alloy Substrates |
| Sub Title (in English) | |
| Keyword(1) | optical anisotropy |
| Keyword(2) | polarization properties |
| Keyword(3) | InGaN quantum wells |
| Keyword(4) | alloy substrates |
| Keyword(5) | valence band |
| Keyword(6) | strain |
| 1st Author's Name | A. Atsushi YAMAGUCHI |
| 1st Author's Affiliation | Research Laboratory for Integrated Technological Systems, Kanazawa Institute of Technology() |
| Date | 2008-11-28 |
| Paper # | ED2008-172,CPM2008-121,LQE2008-116 |
| Volume (vol) | vol.108 |
| Number (no) | 321 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |