Presentation 2008-11-28
Luminescence properties from two types of prismatic planes of InGaN
Hisashi KANIE, Kenichi AKASHI, Hidemi TUMUKI,
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Abstract(in English) InGaN crystals yielding blue cathodoluminescence (CL) were grown by the nitridation of the mixture of GaN crystals with indium sulfide powders in an ammonia flow at 1000℃. Grown InGaN crystals have crystal habit with twelve prismatic planes. By a highly spatially resolved CL imagining study on a scanning electron microscope equipped with a monochromator the prismatic planes are grouped into two groups: pentagonal shaped planes yielding blue CL and rectangular planes without luminescence. The pentagonal shaped plane is assigned to the {11-20} a-plane by electron backscattering pattern (EBSP) method. InGaN growth with In content controlled by GaN growth planes is discussed.
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Keyword(in English) InGaN / GaN / low voltage phosphor / m plane / a plane / CL / EBSP
Paper # ED2008-171,CPM2008-120,LQE2008-115
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Committee ED
Conference Date 2008/11/20(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Luminescence properties from two types of prismatic planes of InGaN
Sub Title (in English)
Keyword(1) InGaN
Keyword(2) GaN
Keyword(3) low voltage phosphor
Keyword(4) m plane
Keyword(5) a plane
Keyword(6) CL
Keyword(7) EBSP
1st Author's Name Hisashi KANIE
1st Author's Affiliation Faculty of Industrial Science and Technology, Tokyo University of Science()
2nd Author's Name Kenichi AKASHI
2nd Author's Affiliation /
3rd Author's Name Hidemi TUMUKI
3rd Author's Affiliation
Date 2008-11-28
Paper # ED2008-171,CPM2008-120,LQE2008-115
Volume (vol) vol.108
Number (no) 321
Page pp.pp.-
#Pages 4
Date of Issue