| Presentation | 2008-11-28 280nm-band InAlGaN-based high-power UV LEDs Hideki Hirayama, Sachie Fujikawa, Takayoshi Takano, Kenji Tsubaki, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Quaternary InAlGaN alloy is attracting much attention as candidate material for realizing deep-ultraviolet (DUV) light-emitting diodes (LEDs) and laser diodes (LDs), because efficient UV emission can be obtained due to In-incorporation effects. In this study, we succeeded in the growth of high-quality InAlGaN with high-Al-content (>50%) by using quite low growth rate. We also revealed that the oxygen impurity concentration was significantly reduced and the surface roughness was improved for the quaternary InAlGaN by introducing the light-doping of Si. At last, we demonstrated extremely high internal quantum efficiency (>80%) for 280nm-band InAlGaN quantum wells (QWs) at room temperature (RT). We fabricated a 280nm-band InAlGaN-based LED on an AlN/sapphire template. The maximum output power and the external quantum efficiency (EQE) were 10.6mW and 1.2%, respectively, under RT CW operation. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | quaternary InAlGaN / UV LED / external quantum efficiency / In segregation effect |
| Paper # | ED2008-169,CPM2008-118,LQE2008-113 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2008/11/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 280nm-band InAlGaN-based high-power UV LEDs |
| Sub Title (in English) | |
| Keyword(1) | quaternary InAlGaN |
| Keyword(2) | UV LED |
| Keyword(3) | external quantum efficiency |
| Keyword(4) | In segregation effect |
| 1st Author's Name | Hideki Hirayama |
| 1st Author's Affiliation | RIKEN:Saitama University:Japan Science and Technology Agency, CREST() |
| 2nd Author's Name | Sachie Fujikawa |
| 2nd Author's Affiliation | RIKEN:Saitama University:Japan Science and Technology Agency, CREST |
| 3rd Author's Name | Takayoshi Takano |
| 3rd Author's Affiliation | RIKEN:Panasonic Electric Works Co., Ltd |
| 4th Author's Name | Kenji Tsubaki |
| 4th Author's Affiliation | RIKEN:Panasonic Electric Works Co., Ltd |
| Date | 2008-11-28 |
| Paper # | ED2008-169,CPM2008-118,LQE2008-113 |
| Volume (vol) | vol.108 |
| Number (no) | 321 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |