Presentation 2008-10-23
Millimeter-Wave Power Amplifiers in CMOS
Toshihide SUZUKI, Yoichi KAWANO, Masaru SATO, Tatsuya HIROSE, Naoki HARA, Kazukiyo JOSHIN,
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Abstract(in English) This paper introduces millimeter-wave band power amplifiers (PAs) using standard 90nm CMOS technology. By developing an accurate transistor model up to 80GHz and a matching network topology with short stub, we have succeeded at 77GHz operation of CMOS PAs. The 4-stage single PA achieved 9.7-dB linear gain and 10.4-dBm saturated output power (Psat).
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Keyword(in English) millimeter-wave / Power amplifier / CMOS
Paper # EMCJ2008-67,MW2008-111
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Committee MW
Conference Date 2008/10/16(1days)
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Registration To Microwaves (MW)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Millimeter-Wave Power Amplifiers in CMOS
Sub Title (in English)
Keyword(1) millimeter-wave
Keyword(2) Power amplifier
Keyword(3) CMOS
1st Author's Name Toshihide SUZUKI
1st Author's Affiliation Fujitsu Laboratories Ltd.()
2nd Author's Name Yoichi KAWANO
2nd Author's Affiliation Fujitsu Laboratories Ltd.
3rd Author's Name Masaru SATO
3rd Author's Affiliation Fujitsu Laboratories Ltd.
4th Author's Name Tatsuya HIROSE
4th Author's Affiliation Fujitsu Laboratories Ltd.
5th Author's Name Naoki HARA
5th Author's Affiliation Fujitsu Laboratories Ltd.
6th Author's Name Kazukiyo JOSHIN
6th Author's Affiliation Fujitsu Laboratories Ltd.
Date 2008-10-23
Paper # EMCJ2008-67,MW2008-111
Volume (vol) vol.108
Number (no) 257
Page pp.pp.-
#Pages 5
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