Presentation 2008-10-31
Large conductance C_<60> thin-film transistors
Masatoshi KITAMURA, Jong Ho NA, Yasuhiko ARAKAWA,
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Abstract(in English) Bottom-contact C_<60> thin-film transistors (TFTs) have been fabricated. The channel lengths (L) ranged from 5 to 40μm. The saturation mobilities slightly depended on the channel length, ranging from 2.45 to 3.23cm^2/Vs. The highest mobility of 3.23cm^2/Vs was obtained from a TFT with L=5μm. The TFT had a conductance of 119μS/mm; which is relative high as compared to conventional organic TFTs. To investigate the reason that the short channel TFTs has high mobilities, we examined parasitic resistance. The calculated parasitic resistance was less than 1kWcm. The low parasitic resistance causes high mobility of the TFTs with with L=5μm.
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Keyword(in English) C_<60> / bottom contact / thin-film transistor / conductance / parasitic resistance
Paper # OME2008-52
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Committee OME
Conference Date 2008/10/24(1days)
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Paper Information
Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Large conductance C_<60> thin-film transistors
Sub Title (in English)
Keyword(1) C_<60>
Keyword(2) bottom contact
Keyword(3) thin-film transistor
Keyword(4) conductance
Keyword(5) parasitic resistance
1st Author's Name Masatoshi KITAMURA
1st Author's Affiliation Institute for Nano Quantum Information Electronics (INQIE), The University of Tokyo:Research Center for Advanced Science and Technology (RCAST), The University of Tokyo()
2nd Author's Name Jong Ho NA
2nd Author's Affiliation Institute for Nano Quantum Information Electronics (INQIE), The University of Tokyo:Research Center for Advanced Science and Technology (RCAST), The University of Tokyo
3rd Author's Name Yasuhiko ARAKAWA
3rd Author's Affiliation Institute for Nano Quantum Information Electronics (INQIE), The University of Tokyo:Research Center for Advanced Science and Technology (RCAST), The University of Tokyo
Date 2008-10-31
Paper # OME2008-52
Volume (vol) vol.108
Number (no) 272
Page pp.pp.-
#Pages 6
Date of Issue