Presentation 2008-10-31
Examination of Ar ion bombardment effect to ITO Thin Films
Saki TAKAHASHI, Masato NIKI, Youhei NAKAMURA, Hidehiko SHIMIZU, Haruo IWANO, Yasuo FUKUSHIMA, Koutarou NAGATA, Yoichi HOSHI,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) In order to examine deposition method to crystallize an ITO film at low temperature, deposition of ITO thin films was attempted by the combination of RF-DC coupled magnetron sputtering method and substrate bias sputtering method. As a result, when distance between target and substrate was short, the ITO film having the good crystallinity and low resestivity was not obtained. When distance between target and substrate was long, compared with short, the amount of Ar ion bombardment decreased. But tthe crystallinity of the film improved and the resestivity of the film decreased. This result is not a heated effect by the ion bombardment. It is thought that. Ar ions and particles of the film surface are caused by having changed a momentum and the oxygen of films is caused by it being done selective sputtering.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) ITO thin film / RF-DC coupled magnetron sputtering method / substrate bias sputtering / low temperature
Paper # CPM2008-84
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Conference Information
Committee CPM
Conference Date 2008/10/23(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Examination of Ar ion bombardment effect to ITO Thin Films
Sub Title (in English)
Keyword(1) ITO thin film
Keyword(2) RF-DC coupled magnetron sputtering method
Keyword(3) substrate bias sputtering
Keyword(4) low temperature
1st Author's Name Saki TAKAHASHI
1st Author's Affiliation Graduate School of Science and Technology, Niigata University()
2nd Author's Name Masato NIKI
2nd Author's Affiliation Graduate School of Science and Technology, Niigata University
3rd Author's Name Youhei NAKAMURA
3rd Author's Affiliation Faculty of Engineering, Niigata University
4th Author's Name Hidehiko SHIMIZU
4th Author's Affiliation Graduate School of Science and Technology, Niigata University
5th Author's Name Haruo IWANO
5th Author's Affiliation Graduate School of Science and Technology, Niigata University
6th Author's Name Yasuo FUKUSHIMA
6th Author's Affiliation Graduate School of Science and Technology, Niigata University
7th Author's Name Koutarou NAGATA
7th Author's Affiliation Graduate School of Science and Technology, Niigata University
8th Author's Name Yoichi HOSHI
8th Author's Affiliation Faculty of Engineering, Tokyo Polytechinic University
Date 2008-10-31
Paper # CPM2008-84
Volume (vol) vol.108
Number (no) 269
Page pp.pp.-
#Pages 6
Date of Issue