Presentation 2008-08-29
Doherty power amplifier using GaN class-E device
Takaaki ISHIKAWA, Kazunori KASHIMURA, Eiki TAKAHASHI, Nobuyuki ADACHI,
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Abstract(in English) A Doherty amplifier for base stations using an internally class-E matched GaN packaged device has been developed. The class-E packaged device achieves 74% drain efficiency at 80W (49dBm) output power under 10% duty pulsed operation. Considering that the load modulation of the carrier amplifier, we designed the internal matching circuit by a class-J concept. The Doherty amplifier for 2.14GHz band achieves 15.5dB gain and 58% CW drain efficiency at 6dB back-off from 170W (52.3dBm) saturated power. This paper also shows the load-pull results of the class-E device and the Digital Pre-Distortion (DPD) results of a multi-stage amplifier.
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Keyword(in English) class-E / Doherty power amplifier / GaN / DPD / Multistage power amplifier
Paper # MW2008-101
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Committee MW
Conference Date 2008/8/21(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Doherty power amplifier using GaN class-E device
Sub Title (in English)
Keyword(1) class-E
Keyword(2) Doherty power amplifier
Keyword(3) GaN
Keyword(4) DPD
Keyword(5) Multistage power amplifier
1st Author's Name Takaaki ISHIKAWA
1st Author's Affiliation Japan Radio Co., Ltd.()
2nd Author's Name Kazunori KASHIMURA
2nd Author's Affiliation Japan Radio Co., Ltd.
3rd Author's Name Eiki TAKAHASHI
3rd Author's Affiliation Japan Radio Co., Ltd.
4th Author's Name Nobuyuki ADACHI
4th Author's Affiliation Japan Radio Co., Ltd.
Date 2008-08-29
Paper # MW2008-101
Volume (vol) vol.108
Number (no) 195
Page pp.pp.-
#Pages 6
Date of Issue