Presentation 2008-08-29
A Design and Fabrication of 5.8GHz Class-F Amplifier using GaN HEMT
Kenta KURODA, Ryo ISHIKAWA, Kazuhiko HONJO,
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Abstract(in English) We have developed the class-F high-efficiency amplifier using an AlGaN/GaN HEMT at 5.8GHz for microwave power transmission. Because of their higher operating voltage, GaN devices are expected to have higher operating efficiency as compared to GaAs devices. The fabricated amplifier using a low-loss resin microstrip substrate validated high efficiency expectations with a maximum power added efficiency of 68.3%, and output power of up to 33.8dBm at 5.7GHz.
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Keyword(in English) High-efficiency / class-F amplifier / GaN HEMT
Paper # MW2008-95
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Committee MW
Conference Date 2008/8/21(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Design and Fabrication of 5.8GHz Class-F Amplifier using GaN HEMT
Sub Title (in English)
Keyword(1) High-efficiency
Keyword(2) class-F amplifier
Keyword(3) GaN HEMT
1st Author's Name Kenta KURODA
1st Author's Affiliation Advanced Wireless Communication Research Center (AWCC), The University of Electro-Communications()
2nd Author's Name Ryo ISHIKAWA
2nd Author's Affiliation Advanced Wireless Communication Research Center (AWCC), The University of Electro-Communications
3rd Author's Name Kazuhiko HONJO
3rd Author's Affiliation Advanced Wireless Communication Research Center (AWCC), The University of Electro-Communications
Date 2008-08-29
Paper # MW2008-95
Volume (vol) vol.108
Number (no) 195
Page pp.pp.-
#Pages 6
Date of Issue