| Presentation | 2008-08-28 60-GHz-band CMOS Power Amplifier and Transceiver Technology Masahiro Tanomura, Yasuhiro Hamada, Syuya Kishimoto, Masaharu Ito, Naoyuki Orihashi, Kenichi Maruhashi, Hidenori Shimawaki, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper describes a millimeter-wave CMOS power amplifier (PA) and transceiver based on standard 90-nm CMOS technology. For a PA, a reliability issue due to degradation of hot carrier injection should be carefully considered for large-signal operation. To maximize output power while ensuring sufficient lifetime, we have established PA design process including co-simulation technique. The life time is estimated from substrate current on the load circle. The developed PA exhibits a saturated output power of 8.5dBm with 15.2dB linear gain at 60GHz with a supply voltage as low as 0.7V where sufficient lifetime is expected. On the other hand, the 60-GHz band single-chip transmitter achieved an average output power of 6.0dBm under 2.6-Gbps QPSK modulation operating at a drain voltage of 0.7V. Finally, connecting the fabricated single-chip receiver, 2.6-Gbps QPSK modulation signal can be demodulated. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | CMOS / Amplifier / Reliability / Millimeter-wave / 60-GHz / Transceiver |
| Paper # | MW2008-86 |
| Date of Issue |
| Conference Information | |
| Committee | MW |
|---|---|
| Conference Date | 2008/8/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Microwaves (MW) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 60-GHz-band CMOS Power Amplifier and Transceiver Technology |
| Sub Title (in English) | |
| Keyword(1) | CMOS |
| Keyword(2) | Amplifier |
| Keyword(3) | Reliability |
| Keyword(4) | Millimeter-wave |
| Keyword(5) | 60-GHz |
| Keyword(6) | Transceiver |
| 1st Author's Name | Masahiro Tanomura |
| 1st Author's Affiliation | Nano Electronics Research Laboratories, NEC Corporation() |
| 2nd Author's Name | Yasuhiro Hamada |
| 2nd Author's Affiliation | Business Innovation Center, NEC Corporation |
| 3rd Author's Name | Syuya Kishimoto |
| 3rd Author's Affiliation | Business Innovation Center, NEC Corporation |
| 4th Author's Name | Masaharu Ito |
| 4th Author's Affiliation | Business Innovation Center, NEC Corporation |
| 5th Author's Name | Naoyuki Orihashi |
| 5th Author's Affiliation | Business Innovation Center, NEC Corporation |
| 6th Author's Name | Kenichi Maruhashi |
| 6th Author's Affiliation | Business Innovation Center, NEC Corporation |
| 7th Author's Name | Hidenori Shimawaki |
| 7th Author's Affiliation | Nano Electronics Research Laboratories, NEC Corporation |
| Date | 2008-08-28 |
| Paper # | MW2008-86 |
| Volume (vol) | vol.108 |
| Number (no) | 195 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |