| Presentation | 2008-08-28 K-band AlGaN/GaN-based MMICs on Sapphire Substrates Tomohiro MURATA, Masayuki KURODA, Shuichi NAGAI, Masaaki NISHIJIMA, Hidetoshi ISHIDA, Manabu YANAGIHARA, Tetsuzo UEDA, Hiroyuki SAKAI, Tsuyoshi TANAKA, Ming LI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We present K-band AlGaN/GaN HFET MMIC amplifiers with integrated microstrip lines on sapphire substrates. The microstrip lines with via-holes through chemically stable sapphire are successfully formed by using a novel laser drilling technique. Integrated AlGaN/GaN MIS-HFETs have in-situ SiN as a gate insulator, which is formed subsequently after the epitaxial growth without any exposure in the air. A typical MIS-HFET shows f_ |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN/GaN heterojunction FET / MMIC amplifiers / sapphire / via hole / laser drilling / microstrip line |
| Paper # | MW2008-85 |
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| Conference Information | |
| Committee | MW |
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| Conference Date | 2008/8/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Microwaves (MW) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | K-band AlGaN/GaN-based MMICs on Sapphire Substrates |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN heterojunction FET |
| Keyword(2) | MMIC amplifiers |
| Keyword(3) | sapphire |
| Keyword(4) | via hole |
| Keyword(5) | laser drilling |
| Keyword(6) | microstrip line |
| 1st Author's Name | Tomohiro MURATA |
| 1st Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd.() |
| 2nd Author's Name | Masayuki KURODA |
| 2nd Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 3rd Author's Name | Shuichi NAGAI |
| 3rd Author's Affiliation | Panasonic Boston Laboratory, Panasonic Technologies Company |
| 4th Author's Name | Masaaki NISHIJIMA |
| 4th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 5th Author's Name | Hidetoshi ISHIDA |
| 5th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 6th Author's Name | Manabu YANAGIHARA |
| 6th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 7th Author's Name | Tetsuzo UEDA |
| 7th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 8th Author's Name | Hiroyuki SAKAI |
| 8th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 9th Author's Name | Tsuyoshi TANAKA |
| 9th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 10th Author's Name | Ming LI |
| 10th Author's Affiliation | Panasonic Boston Laboratory, Panasonic Technologies Company |
| Date | 2008-08-28 |
| Paper # | MW2008-85 |
| Volume (vol) | vol.108 |
| Number (no) | 195 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |