| Presentation | 2008-08-28 S-band GaN HEMT Low Noise Amplifier with High Survivability Koji YAMANAKA, Hidenori YUKAWA, Akira INOUE, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this paper, an S-band GaN HEMT LNA, which uses a small discrete GaN HEMT chip to minimize the cost, is presented. It exhibited low noise performance of better than 1dB noise figure. It also endured over 35dBm (3W) input power, which is large enough to eliminate limiters. SiC substrate occupation is only 0.34mm^2, which is the smallest die size for GaN HEMT LNAs ever reported. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN HEMT / High-voltage techniques / MODFET low noise amplifiers |
| Paper # | MW2008-84 |
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| Conference Information | |
| Committee | MW |
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| Conference Date | 2008/8/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Microwaves (MW) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | S-band GaN HEMT Low Noise Amplifier with High Survivability |
| Sub Title (in English) | |
| Keyword(1) | GaN HEMT |
| Keyword(2) | High-voltage techniques |
| Keyword(3) | MODFET low noise amplifiers |
| 1st Author's Name | Koji YAMANAKA |
| 1st Author's Affiliation | Mitsubishi Electric Corporation Information Technology R & D Center() |
| 2nd Author's Name | Hidenori YUKAWA |
| 2nd Author's Affiliation | Mitsubishi Electric Corporation Information Technology R & D Center |
| 3rd Author's Name | Akira INOUE |
| 3rd Author's Affiliation | Mitsubishi Electric Corporation Information Technology R & D Center |
| Date | 2008-08-28 |
| Paper # | MW2008-84 |
| Volume (vol) | vol.108 |
| Number (no) | 195 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |