Presentation 2008-08-28
Design of Flat Gain LNA for 3.1-10.2GHz Band UWB Applications in 0.18μm CMOS Process
R. K. Pokharel, A. I. A. Galal, H. Kanaya, K. Yoshida,
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Abstract(in English) A CMOS low noise amplifier (LNA) for ultra-wideband (UWB) systems is presented. The proposed LNA achieve wide operating bandwidth for 3-10.6GHz by using resistive shunt feedback topology. Two stage amplifiers and an inter stage circuit are designed to achieve wider gain bandwidth. The shunt resistive feedback are employed in input and output stage to provide wideband input matching with low noise figure (NF). This work is designed and fabricated in TSMC 0.18μm CMOS process. The proposed UWB LNA achieves a measured gain 9dB and has a noise figure less than 3.5dB over entire band while consuming 21.5mW of power.
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Keyword(in English) Flat gain / LNA / RF integrated circuits / UWB systems / 0.18μm CMOS Process
Paper # MW2008-83
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Committee MW
Conference Date 2008/8/21(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Design of Flat Gain LNA for 3.1-10.2GHz Band UWB Applications in 0.18μm CMOS Process
Sub Title (in English)
Keyword(1) Flat gain
Keyword(2) LNA
Keyword(3) RF integrated circuits
Keyword(4) UWB systems
Keyword(5) 0.18μm CMOS Process
1st Author's Name R. K. Pokharel
1st Author's Affiliation Graduate School of Information Science and Electrical Engineering, Kyushu University()
2nd Author's Name A. I. A. Galal
2nd Author's Affiliation Graduate School of Information Science and Electrical Engineering, Kyushu University
3rd Author's Name H. Kanaya
3rd Author's Affiliation Graduate School of Information Science and Electrical Engineering, Kyushu University
4th Author's Name K. Yoshida
4th Author's Affiliation Graduate School of Information Science and Electrical Engineering, Kyushu University
Date 2008-08-28
Paper # MW2008-83
Volume (vol) vol.108
Number (no) 195
Page pp.pp.-
#Pages 5
Date of Issue