| Presentation | 2008-08-05 Fabrication of an ultrahigh luminance field emission display Masayoshi Nagao, Tomoya Yoshida, Seigo kanemaru, Kazuhito Nakamura, Yoshihisa Marushima, Masateru Taniguchi, Shigeo Itoh, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Field emission display (FED) is currently operated in passive matrix driven mode. By adding a memory function to each pixel of the FED, the luminance can be much more improved. An ultrahigh luminance FED which has a luminance more than 10,000cd/m^2 can be realized by this method. We fabricated field emission display having a memory function, in which FEA and three thin-film transistors (TFTs) are monolithically integrated. The first TFT is an emission-control TFT which control the emission current from the FEA. The second one is a write-enable switch for memory capacitor. The last one is a TFT for discharging the memorized data on capacitor. In this paper, we will report on the fundamental operation of the display prototype and controllability of the luminescent period. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Field emission display / Field emitter array / Luminance / Thin-film transistor |
| Paper # | ED2008-120 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2008/7/28(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of an ultrahigh luminance field emission display |
| Sub Title (in English) | |
| Keyword(1) | Field emission display |
| Keyword(2) | Field emitter array |
| Keyword(3) | Luminance |
| Keyword(4) | Thin-film transistor |
| 1st Author's Name | Masayoshi Nagao |
| 1st Author's Affiliation | National Institute of Advanced Industrial Science and Technology() |
| 2nd Author's Name | Tomoya Yoshida |
| 2nd Author's Affiliation | National Institute of Advanced Industrial Science and Technology |
| 3rd Author's Name | Seigo kanemaru |
| 3rd Author's Affiliation | National Institute of Advanced Industrial Science and Technology |
| 4th Author's Name | Kazuhito Nakamura |
| 4th Author's Affiliation | Futaba Corporation |
| 5th Author's Name | Yoshihisa Marushima |
| 5th Author's Affiliation | Futaba Corporation |
| 6th Author's Name | Masateru Taniguchi |
| 6th Author's Affiliation | Futaba Corporation |
| 7th Author's Name | Shigeo Itoh |
| 7th Author's Affiliation | Futaba Corporation |
| Date | 2008-08-05 |
| Paper # | ED2008-120 |
| Volume (vol) | vol.108 |
| Number (no) | 177 |
| Page | pp.pp.- |
| #Pages | 6 |
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