Presentation 2008-08-05
Application of silicon field emitter arrays for space charge compensation of low energy ion beam
Mitsuaki TAKEUCHI, Yasuhito GOTOH, Hiroshi TSUJI, Shigeki SAKAI, Tsunenobu KIMOTO, Junzo ISHIKAWA,
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Abstract(in English) We demonstrated a space charge compensation by using a surface-carbonized silicon field emitter array (Si:C-FEA). The Si:C-FEA showed good emission properties in Ne gas atmosphere of 2.0×10^<-4>Pa. As a result, decrease of the beam divergence was observed in a case of the electron supply. It was found that the Si:C-FEA is possible candidate for the SCC of the ion-implantation.
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Keyword(in English) Ion implantation / space charge compensation / field emitter arrays / silicon
Paper # ED2008-119
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Committee ED
Conference Date 2008/7/28(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Application of silicon field emitter arrays for space charge compensation of low energy ion beam
Sub Title (in English)
Keyword(1) Ion implantation
Keyword(2) space charge compensation
Keyword(3) field emitter arrays
Keyword(4) silicon
1st Author's Name Mitsuaki TAKEUCHI
1st Author's Affiliation JST Innovation plaza Kyoto()
2nd Author's Name Yasuhito GOTOH
2nd Author's Affiliation Kyoto University
3rd Author's Name Hiroshi TSUJI
3rd Author's Affiliation Kyoto University
4th Author's Name Shigeki SAKAI
4th Author's Affiliation Nissin Ion Equipment, Co. Ltd.
5th Author's Name Tsunenobu KIMOTO
5th Author's Affiliation Kyoto University
6th Author's Name Junzo ISHIKAWA
6th Author's Affiliation Kyoto University
Date 2008-08-05
Paper # ED2008-119
Volume (vol) vol.108
Number (no) 177
Page pp.pp.-
#Pages 4
Date of Issue