| Presentation | 2008-08-04 Electron emission from nanocrystalline silicon based MOS cathodes Hidetaka SHIMAWAKI, Yo KIDA, Yoichiro NEO, Hidenori MIMURA, Katsuhisa MURAKAMI, Fujio WAKAYA, Mikio TAKAI, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Emission characteristics of planar cathodes based on nanocrystalline Si covered with a thin oxide film have been studied. The electron emission occurred at the gate voltage higher than the work function of the Au gate, and the emission efficiency was improved up to 4% by reducing the thickness of Au electrode. A lot of nanoholes in the thin Au film were observed, suggesting emission included electrons directly emitted from nanocrystalline aligned under nanoholes. The energy distribution of emitted electron is also discussed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOS / tunneling cathode / field emitter / electron emission / nanocrystalline silicon |
| Paper # | ED2008-112 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2008/7/28(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electron emission from nanocrystalline silicon based MOS cathodes |
| Sub Title (in English) | |
| Keyword(1) | MOS |
| Keyword(2) | tunneling cathode |
| Keyword(3) | field emitter |
| Keyword(4) | electron emission |
| Keyword(5) | nanocrystalline silicon |
| 1st Author's Name | Hidetaka SHIMAWAKI |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering, Hachinohe Institute of Technology() |
| 2nd Author's Name | Yo KIDA |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Hachinohe Institute of Technology |
| 3rd Author's Name | Yoichiro NEO |
| 3rd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 4th Author's Name | Hidenori MIMURA |
| 4th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 5th Author's Name | Katsuhisa MURAKAMI |
| 5th Author's Affiliation | Center for Quantum Science and Technology under Extreme Conditions, Osaka University |
| 6th Author's Name | Fujio WAKAYA |
| 6th Author's Affiliation | Center for Quantum Science and Technology under Extreme Conditions, Osaka University |
| 7th Author's Name | Mikio TAKAI |
| 7th Author's Affiliation | Center for Quantum Science and Technology under Extreme Conditions, Osaka University |
| Date | 2008-08-04 |
| Paper # | ED2008-112 |
| Volume (vol) | vol.108 |
| Number (no) | 177 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |