| Presentation | 2008-09-30 Gate Structure Dependence of Organic Field Effect Transistor Fabricated by Wet Process Yohei HIROSE, Hirotake KAJII, Kohki TAMURA, Yutaka OHMORI, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The gate structure dependence of organic field-effect transistors (OFETs) using poly [(9,9-dialkylfluorene-2,7-dyil)-co-(bithiophene)] (F8T2) was investigated. In case of top gate type, firstly, we dissolved F8T2 with different kind of solvent, and inspected the solvent dependency. And we couldn't obtain any solvent dependency of F8T2. We also investigated the effect of interface treatment between source/drain electrode and active layer. Compared with untreated one, treated one showed more efficient carrier injection and threshold voltage shift toward 0V. This result would be attributed to the fact that interface treatment reduced the barrier energy between electrode and active layer. On the other hand, OFETs fabricated by bottom gate structure didn't work as a transistor. The result of C-V property suggested that in case of bottom gate type, the channel should not be formed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | organic field-effect transistor / top gate structure / F8T2 / PVP / interface treatment |
| Paper # | OME2008-49 |
| Date of Issue |
| Conference Information | |
| Committee | OME |
|---|---|
| Conference Date | 2008/9/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Organic Material Electronics (OME) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Gate Structure Dependence of Organic Field Effect Transistor Fabricated by Wet Process |
| Sub Title (in English) | |
| Keyword(1) | organic field-effect transistor |
| Keyword(2) | top gate structure |
| Keyword(3) | F8T2 |
| Keyword(4) | PVP |
| Keyword(5) | interface treatment |
| 1st Author's Name | Yohei HIROSE |
| 1st Author's Affiliation | Center for Advanced Science and Innovation, Osaka University() |
| 2nd Author's Name | Hirotake KAJII |
| 2nd Author's Affiliation | Center for Advanced Science and Innovation, Osaka University |
| 3rd Author's Name | Kohki TAMURA |
| 3rd Author's Affiliation | Tokyo Ohka Kogyo Co. Ltd. |
| 4th Author's Name | Yutaka OHMORI |
| 4th Author's Affiliation | Center for Advanced Science and Innovation, Osaka University |
| Date | 2008-09-30 |
| Paper # | OME2008-49 |
| Volume (vol) | vol.108 |
| Number (no) | 225 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |