| Presentation | 2008-07-11 Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV) Hirotaka Kaku, Katsunori Makihara, Mitsuhisa Ikeda, Seiichiro Higashi, Seiichi Miyazaki, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Formation of highly crystallized Ge films on quartz substrate from VHF-ICP of GeH_4 and electrical properties of the films have been investigated. From the Hall measurements, we found that the films show p-type conduction and that carrier concentrations for the films of 92 and 98% in the crystallinity are 2.9×10^<19> and 5.7×10^<18>cm^<-3>, respectively. In addition, we observed a carrier mobility of 22cm^2/Vs for the film with 98% crystallinity, which is ～2 times higher compared to 12cm^2/Vs of 92% case. This result suggests that defects in the films play a role on carrier type and transport properties. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Ge / VHF / carrier concentration / defect |
| Paper # | ED2008-90,SDM2008-109 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2008/7/2(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV) |
| Sub Title (in English) | |
| Keyword(1) | Ge |
| Keyword(2) | VHF |
| Keyword(3) | carrier concentration |
| Keyword(4) | defect |
| 1st Author's Name | Hirotaka Kaku |
| 1st Author's Affiliation | Graduate School of Advanced Sciences of Matter, Hiroshima University() |
| 2nd Author's Name | Katsunori Makihara |
| 2nd Author's Affiliation | Graduate School of Advanced Sciences of Matter, Hiroshima University |
| 3rd Author's Name | Mitsuhisa Ikeda |
| 3rd Author's Affiliation | Graduate School of Advanced Sciences of Matter, Hiroshima University |
| 4th Author's Name | Seiichiro Higashi |
| 4th Author's Affiliation | Graduate School of Advanced Sciences of Matter, Hiroshima University |
| 5th Author's Name | Seiichi Miyazaki |
| 5th Author's Affiliation | Graduate School of Advanced Sciences of Matter, Hiroshima University |
| Date | 2008-07-11 |
| Paper # | ED2008-90,SDM2008-109 |
| Volume (vol) | vol.108 |
| Number (no) | 121 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |