Presentation 2008-07-09
Recessed Channel Dual Gate Single Electron Transistors (RCDG-SETs) for room temperature operation(Session3: Emerging Devices I)
Sang Hyuk Park, Sangwoo Kang, Dong-Seup Lee, Jung Han Lee, Hong-Seon Yang, Kwon-Chil Kang, Joung-Eob Lee, Jong Duk Lee, Byung-Gook Park,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A Recessed-Channel Dual-Gate Single Electron Transistor (RCDG-SET) which has the possibility of room temperature operation is proposed. Side gates of a RCDG-SET form electrical tunneling barriers around a recessed channel, which is newly introduced. Not only control gate but also a recessed channel is self aligned to source and drain. Characteristics of a RCDG-SET are compared with those of previous DG-SETs through device simulation (SILVACO). Due to a recessed channel and a self aligned structure, MOSFET current which causes low Peak-to-Valley Current Ratio (PVCR) is suppressed. This property of a RCDG-SET is expected to contribute for room temperature operation.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Single Electron Transistor / recessed channel / MOSFET current
Paper # ED2008-53,SDM2008-72
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Conference Information
Committee ED
Conference Date 2008/7/2(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Recessed Channel Dual Gate Single Electron Transistors (RCDG-SETs) for room temperature operation(Session3: Emerging Devices I)
Sub Title (in English)
Keyword(1) Single Electron Transistor
Keyword(2) recessed channel
Keyword(3) MOSFET current
1st Author's Name Sang Hyuk Park
1st Author's Affiliation Inter-University Semiconductor Research Center, Seoul National University:School of Electrical Engineering and Computer Science, Seoul National University()
2nd Author's Name Sangwoo Kang
2nd Author's Affiliation Inter-University Semiconductor Research Center, Seoul National University:School of Electrical Engineering and Computer Science, Seoul National University
3rd Author's Name Dong-Seup Lee
3rd Author's Affiliation Inter-University Semiconductor Research Center, Seoul National University:School of Electrical Engineering and Computer Science, Seoul National University
4th Author's Name Jung Han Lee
4th Author's Affiliation Inter-University Semiconductor Research Center, Seoul National University:School of Electrical Engineering and Computer Science, Seoul National University
5th Author's Name Hong-Seon Yang
5th Author's Affiliation Inter-University Semiconductor Research Center, Seoul National University:School of Electrical Engineering and Computer Science, Seoul National University
6th Author's Name Kwon-Chil Kang
6th Author's Affiliation Inter-University Semiconductor Research Center, Seoul National University:School of Electrical Engineering and Computer Science, Seoul National University
7th Author's Name Joung-Eob Lee
7th Author's Affiliation Inter-University Semiconductor Research Center, Seoul National University:School of Electrical Engineering and Computer Science, Seoul National University
8th Author's Name Jong Duk Lee
8th Author's Affiliation Inter-University Semiconductor Research Center, Seoul National University:School of Electrical Engineering and Computer Science, Seoul National University
9th Author's Name Byung-Gook Park
9th Author's Affiliation Inter-University Semiconductor Research Center, Seoul National University:School of Electrical Engineering and Computer Science, Seoul National University
Date 2008-07-09
Paper # ED2008-53,SDM2008-72
Volume (vol) vol.108
Number (no) 121
Page pp.pp.-
#Pages 4
Date of Issue