Presentation | 2008-07-09 Recessed Channel Dual Gate Single Electron Transistors (RCDG-SETs) for room temperature operation(Session3: Emerging Devices I) Sang Hyuk Park, Sangwoo Kang, Dong-Seup Lee, Jung Han Lee, Hong-Seon Yang, Kwon-Chil Kang, Joung-Eob Lee, Jong Duk Lee, Byung-Gook Park, |
---|---|
PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A Recessed-Channel Dual-Gate Single Electron Transistor (RCDG-SET) which has the possibility of room temperature operation is proposed. Side gates of a RCDG-SET form electrical tunneling barriers around a recessed channel, which is newly introduced. Not only control gate but also a recessed channel is self aligned to source and drain. Characteristics of a RCDG-SET are compared with those of previous DG-SETs through device simulation (SILVACO). Due to a recessed channel and a self aligned structure, MOSFET current which causes low Peak-to-Valley Current Ratio (PVCR) is suppressed. This property of a RCDG-SET is expected to contribute for room temperature operation. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Single Electron Transistor / recessed channel / MOSFET current |
Paper # | ED2008-53,SDM2008-72 |
Date of Issue |
Conference Information | |
Committee | ED |
---|---|
Conference Date | 2008/7/2(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Electron Devices (ED) |
---|---|
Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Recessed Channel Dual Gate Single Electron Transistors (RCDG-SETs) for room temperature operation(Session3: Emerging Devices I) |
Sub Title (in English) | |
Keyword(1) | Single Electron Transistor |
Keyword(2) | recessed channel |
Keyword(3) | MOSFET current |
1st Author's Name | Sang Hyuk Park |
1st Author's Affiliation | Inter-University Semiconductor Research Center, Seoul National University:School of Electrical Engineering and Computer Science, Seoul National University() |
2nd Author's Name | Sangwoo Kang |
2nd Author's Affiliation | Inter-University Semiconductor Research Center, Seoul National University:School of Electrical Engineering and Computer Science, Seoul National University |
3rd Author's Name | Dong-Seup Lee |
3rd Author's Affiliation | Inter-University Semiconductor Research Center, Seoul National University:School of Electrical Engineering and Computer Science, Seoul National University |
4th Author's Name | Jung Han Lee |
4th Author's Affiliation | Inter-University Semiconductor Research Center, Seoul National University:School of Electrical Engineering and Computer Science, Seoul National University |
5th Author's Name | Hong-Seon Yang |
5th Author's Affiliation | Inter-University Semiconductor Research Center, Seoul National University:School of Electrical Engineering and Computer Science, Seoul National University |
6th Author's Name | Kwon-Chil Kang |
6th Author's Affiliation | Inter-University Semiconductor Research Center, Seoul National University:School of Electrical Engineering and Computer Science, Seoul National University |
7th Author's Name | Joung-Eob Lee |
7th Author's Affiliation | Inter-University Semiconductor Research Center, Seoul National University:School of Electrical Engineering and Computer Science, Seoul National University |
8th Author's Name | Jong Duk Lee |
8th Author's Affiliation | Inter-University Semiconductor Research Center, Seoul National University:School of Electrical Engineering and Computer Science, Seoul National University |
9th Author's Name | Byung-Gook Park |
9th Author's Affiliation | Inter-University Semiconductor Research Center, Seoul National University:School of Electrical Engineering and Computer Science, Seoul National University |
Date | 2008-07-09 |
Paper # | ED2008-53,SDM2008-72 |
Volume (vol) | vol.108 |
Number (no) | 121 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |