| Presentation | 2008-07-09 Properties of GaN MIS capacitors using Al_2O_3 as gate dielectric deposited by Remote Plasma Atomic Layer Deposition(Session1: Compound Semiconductor Devices) Hyeong-Seon Yun, Ka-Lam Kim, No-Won Kwak, Woo-Seok Lee, Sang-Hyun Jeong, Ju-Ok Seo, Kwang-Ho Kim, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Al_2O_3 thin films were deposited on GaN 0001) by Remote Plasma Atomic Layer Deposition (RPALD) technique using Trimethylaluminum (TMA) precursor and oxygen radicals in the temperature range of 25～500℃. Growth rate per cycle was varied with substrate temperature from 1.8Å/cycle at 25℃ to 0.8Å/cycle at 500℃ Excellent electrical properties of GaN MIS capacitor were obtained at 300℃, in terms of low electrical leakage current density (～10^<-10>A/cm^2 at 1MV) at room temperature, high dielectric constant of 8.6 with the thinner oxide thickness of 12nm Interface trap density (D_ |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Remote Plasma Atomic Layer Deposition (RPALD) / TMA / Aluminum oxide / GaN MIS capacitor / Interface trap density |
| Paper # | ED2008-42,SDM2008-61 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2008/7/2(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Properties of GaN MIS capacitors using Al_2O_3 as gate dielectric deposited by Remote Plasma Atomic Layer Deposition(Session1: Compound Semiconductor Devices) |
| Sub Title (in English) | |
| Keyword(1) | Remote Plasma Atomic Layer Deposition (RPALD) |
| Keyword(2) | TMA |
| Keyword(3) | Aluminum oxide |
| Keyword(4) | GaN MIS capacitor |
| Keyword(5) | Interface trap density |
| 1st Author's Name | Hyeong-Seon Yun |
| 1st Author's Affiliation | Department of Semiconductor Engineering, Cheongju University() |
| 2nd Author's Name | Ka-Lam Kim |
| 2nd Author's Affiliation | Department of Semiconductor Engineering, Cheongju University |
| 3rd Author's Name | No-Won Kwak |
| 3rd Author's Affiliation | Department of Semiconductor Engineering, Cheongju University |
| 4th Author's Name | Woo-Seok Lee |
| 4th Author's Affiliation | Department of Semiconductor Engineering, Cheongju University |
| 5th Author's Name | Sang-Hyun Jeong |
| 5th Author's Affiliation | Department of Semiconductor Engineering, Cheongju University |
| 6th Author's Name | Ju-Ok Seo |
| 6th Author's Affiliation | Itswell Co. Ltd. |
| 7th Author's Name | Kwang-Ho Kim |
| 7th Author's Affiliation | Department of Semiconductor Engineering, Cheongju University |
| Date | 2008-07-09 |
| Paper # | ED2008-42,SDM2008-61 |
| Volume (vol) | vol.108 |
| Number (no) | 121 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |