| Presentation | 2008-07-10 Simulation of Retention Characteristics in Double-Gate Structure Multi-bit SONOS Flash Memory(Session4A: Nonvolatile Memory) Doo-Hyun Kim, Il Han Park, Byung-Gook Park, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper presents a detailed study of the retention characteristics in scaled multi-bit SONOS flash memories. By calculating the oxide field and tunneling currents, we evaluate the charge trapping mechanism. We calculate transient retention dynamics with the ONO fields, trapped charge, and tunneling currents. All the parameters were obtained by physics-based equations and without any fitting parameters or optimization steps. The results can be used with nanoscale nonvolatile memory. This modeling accounts for the V_T shift as a function of trapped charge, time, and thickness of silicon oxide and silicon nitride layers, and can be used for optimizing the ONO geometry and parameters for maximum performance. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SONOS / flash memory / nitride-based charge trap memory / retention / multi-bit / double gate |
| Paper # | ED2008-55,SDM2008-74 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2008/7/2(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Simulation of Retention Characteristics in Double-Gate Structure Multi-bit SONOS Flash Memory(Session4A: Nonvolatile Memory) |
| Sub Title (in English) | |
| Keyword(1) | SONOS |
| Keyword(2) | flash memory |
| Keyword(3) | nitride-based charge trap memory |
| Keyword(4) | retention |
| Keyword(5) | multi-bit |
| Keyword(6) | double gate |
| 1st Author's Name | Doo-Hyun Kim |
| 1st Author's Affiliation | Inter-University Semiconductor Research Center and School of Electrical Engineering, Seoul National University() |
| 2nd Author's Name | Il Han Park |
| 2nd Author's Affiliation | Inter-University Semiconductor Research Center and School of Electrical Engineering, Seoul National University |
| 3rd Author's Name | Byung-Gook Park |
| 3rd Author's Affiliation | Inter-University Semiconductor Research Center and School of Electrical Engineering, Seoul National University |
| Date | 2008-07-10 |
| Paper # | ED2008-55,SDM2008-74 |
| Volume (vol) | vol.108 |
| Number (no) | 122 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |